- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄381460 > AT49BV010-12JC (ATMEL CORP) 1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory PDF資料下載
參數(shù)資料
| 型號(hào)： | AT49BV010-12JC |
| 廠商： | ATMEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory |
| 中文描述： | 128K X 8 FLASH 2.7V PROM, 120 ns, PQCC32 |
| 封裝： | PLASTIC, LCC-32 |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大?。?/td> | 88K |
| 代理商： | AT49BV010-12JC |
AT49(H)BV/(H)LV01
1
Features
Single Supply Voltage, Range 2.7V to 3.6V
Single Supply for Read and Write
Fast Read Access Time - 55 ns
Internal Program Control and Timer
8K bytes Boot Block With Lockout
Fast Erase Cycle Time - 10 seconds
Byte By Byte Programming - 30
μ
s/Byte typical
Hardware Data Protection
DATA Polling For End Of Program Detection
Low Power Dissipation
– 25 mA Active Current
– 50
μ
A CMOS Standby Current
Typical 10,000 Write Cycles
Description
The AT49(H)BV010 and the AT49(H)LV010 are 3-volt-only, 1-megabit Flash memo-
ries organized as 131,072 words of 8 bits each. Manufactured with Atmel’s advanced
nonvolatile CMOS technology, the devices offer access times to 55 ns with power dis-
sipation of just 90 mW over the commercial temperature range. When the devices are
deselected, the CMOS standby current is less than 50
μ
A.
To allow for simple in-system reprogrammability, the AT49(H)BV/(H)LV010 does not
require high input voltages for programming. Three-volt-only commands determine
the read and programming operation of the device. Reading data out of the device is
similar to reading from an EPROM. Reprogramming the AT49(H)BV/(H)LV010 is
performed by erasing the entire 1 megabit of memory and then programming on a
byte by byte basis. The typical byte programming time is a fast 30
μ
s. The end of a
program cycle can be optionally detected by the DATA polling feature. Once the end
of a byte program cycle has been detected, a new access for a read or program can
begin. The typical number of program and erase cycles is in excess of 10,000 cycles.
1-Megabit
(128K x 8)
Single 2.7-volt
Battery-Voltage
Flash Memory
AT49BV010
AT49HBV010
AT49LV010
AT49HLV010
0677B-A–9/97
Pin Configurations
Pin Name
Function
A0 - A16
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7
Data Inputs/Outputs
NC
No Connect
PLCC Top View
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
4
3
2
1
3
3
3
1
1
1
1
1
1
2
I
I
G
I
I
I
I
A
A
A
N
V
W
A
TSOP Top View
Type 1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A11
A9
A8
A13
A14
NC
WE
VCC
NC
A16
A15
A12
A7
A6
A5
A4
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
(continued)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT49BV010-12JI | 1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory |
| AT49BV010-12TC | LM431 Adjustable Precision Zener Shunt Regulator; Package: TO-92; No of Pins: 3 |
| AT49BV010-12TI | LM431 Adjustable Precision Zener Shunt Regulator; Package: SOIC NARROW; No of Pins: 8 |
| AT49BV010-15JC | LM431 Adjustable Precision Zener Shunt Regulator; Package: SOT-23; No of Pins: 3 |
| AT49BV010-15JI | 1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT49BV010-12JI | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory |
| AT49BV010-12TC | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory |
| AT49BV010-12TI | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory |
| AT49BV010-12VC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| AT49BV010-12VI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。