參數(shù)資料
型號(hào): AT49BV008-12TI
廠商: ATMEL CORP
元件分類: DRAM
英文描述: 8-Megabit 1M x 8 3-volt Only Flash Memory
中文描述: 1M X 8 FLASH 3V PROM, 120 ns, PDSO40
封裝: PLASTIC, TSOP-40
文件頁(yè)數(shù): 1/12頁(yè)
文件大?。?/td> 117K
代理商: AT49BV008-12TI
1
Features
Single Supply for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV)
Fast Read Access Time - 110 ns
Internal Program Control and Timer
16K bytes Boot Block With Lockout
Fast Erase Cycle Time - 10 seconds
Byte-By-Byte Programming - 30
μ
s/Byte Typical
Hardware Data Protection
DATA Polling For End Of Program Detection
Low Power Dissipation
– 25 mA Active Current
– 50
μ
A CMOS Standby Current
Typical 10,000 Write Cycles
Description
The AT49BV/LV008 is a 3-volt-only in-system Flash Memory device. Its 8 megabits of
memory is organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s
advanced nonvolatile CMOS technology, the device offers access times to 110 ns
with power dissipation of just 90 mW over the commercial temperature range. When
the device is deselected, the CMOS standby current is less than 50
μ
A.
8-Megabit
(1M x 8)
3-volt Only
Flash Memory
AT49BV008
AT49LV008
Rev. 1043A–03/98
Pin Configurations
Pin Name
Function
A0 - A19
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
RESET
Reset
RDY/BUSY
Ready/Busy Output
I/O0 - I/O7
Data Inputs/Outputs
NC
No Connect
(continued)
TSOP Top VIew
Type 1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
A16
A15
A14
A13
A12
A11
A9
A8
WE
RESET
NC
RDY/BUSY
A18
A7
A6
A5
A4
A3
A2
A1
A17
GND
NC
A19
A10
I/O7
I/O6
I/O5
I/O4
VCC
VCC
NC
I/O3
I/O2
I/O1
I/O0
OE
GND
CE
A0
AT49BV/LV008
8-Megabit 1M x
8 3-volt Only
相關(guān)PDF資料
PDF描述
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