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參數(shù)資料
| 型號： | AT49BV002AN |
| 廠商： | Atmel Corp. |
| 英文描述： | 2-megabit (256K x 8) Single 2.7-volt Battery-Voltage Flash Memory |
| 中文描述： | 2兆位（256K × 8）單2.7伏電池電壓快閃記憶體 |
| 文件頁數(shù)： | 1/19頁 |
| 文件大小： | 269K |
| 代理商： | AT49BV002AN |
Features
Single Supply for Read and Write: 2.7 to 3.6V
Fast Read Access Time – 70 ns
Internal Program Control and Timer
Sector Architecture
– One 16K Bytes Boot Block with Programming Lockout
– Two 8K Bytes Parameter Blocks
– Four Main Memory Blocks (One 32K Bytes, Three 64K Bytes)
Fast Erase Cycle Time – 4 Seconds
Byte-by-Byte Programming – 30 μs/Byte Typical
Hardware Data Protection
DATA Polling for End of Program Detection
Low Power Dissipation
– 15 mA Active Current
– 50 μA CMOS Standby Current
Typical 10,000 Write Cycles
Green (Pb/Halide-free) Packaging Option
1.
The AT49BV002A(N)(T) is a 2.7-volt-only in-system reprogrammable Flash Memory.
Its 2 megabits of memory is organized as 262,144 words by 8 bits. Manufactured with
Atmel’s advanced nonvolatile CMOS technology, the device offers access times to
70 ns with power dissipation of just 54 mW over the industrial temperature range.
Description
When the device is deselected, the CMOS standby current is less than 50 μA. For the
AT49BV002AN(T) pin 1 for PLCC package and pin 9 for the TSOP package are no
connect pins. To allow for simple in-system reprogrammability, the
AT49BV002A(N)(T) does not require high input voltages for programming. Five-volt-
only commands determine the read and programming operation of the device. Read-
ing data out of the device is similar to reading from an EPROM; it has standard CE,
OE, and WE inputs to avoid bus contention. Reprogramming the AT49BV002A(N)(T)
is performed by erasing a block of data and then programming on a byte by byte
basis. The byte programming time is a fast 30
μ
s. The end of a program cycle can be
optionally detected by the DATA polling feature. Once the end of a byte program cycle
has been detected, a new access for a read or program can begin. The typical num-
ber of program and erase cycles is in excess of 10,000 cycles.
The device is erased by executing the erase command sequence; the device inter-
nally controls the erase operations. There are two 8K byte parameter block sections,
four main memory blocks, and one boot block.
The device has the capability to protect the data in the boot block; this feature is
enabled by a command sequence. The 16K-byte boot block section includes a repro-
gramming lock out feature to provide data integrity. The boot sector is designed to
contain user secure code, and when the feature is enabled, the boot sector is pro-
tected from being reprogrammed.
In the AT49BV002AN(T), once the boot block programming lockout feature is
enabled, the contents of the boot block are permanent and cannot be changed. In the
AT49BV002A(T), once the boot block programming lockout feature is enabled, the
contents of the boot block cannot be changed with input voltage levels of 5.5 volts or
less.
2-megabit
(256K x 8)
Single 2.7-volt
Battery-Voltage
Flash Memory
AT49BV002A
AT49BV002AN
AT49BV002AT
AT49BV002ANT
3353F–FLASH–3/05
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT49BV002 | 2-Megabit 256K x 8 Single 2.7-Volt Battery-Voltage Flash Memory |
| AT49BV002N | 2-Megabit 256K x 8 Single 2.7-Volt Battery-Voltage Flash Memory |
| AT49BV002NT | DC-DC Converter, 15Watt, Input VDC: 9~18, Output VDC: 15, Max Output Current(A): 1, Package: 2x1, Isolation(VDC): 1500, Operating Temp. -40??C to +75??C, Low Ripple & Noise, High Efficiency up to 88%, Low Profile Metal Package, Continuous Auto-Recovery, Single & Dual Ouput Regulated |
| AT49BV002T | 2-Megabit 256K x 8 Single 2.7-Volt Battery-Voltage Flash Memory |
| AT49BV002N-12JC | MB 39C 37#20 2#16 SKT RECP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT49BV002AN-70JI | 功能描述:IC FLASH 2MBIT 70NS 32PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 |
| AT49BV002AN-70JU | 功能描述:IC FLASH 2MBIT 70NS 32PLCC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲器:RAM 存儲器類型:SDRAM 存儲容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869 |
| AT49BV002AN-70PI | 功能描述:IC FLASH 2MBIT 70NS 32DIP 制造商:microchip technology 系列:- 包裝:管件 零件狀態(tài):停產(chǎn) 存儲器類型:非易失 存儲器格式:閃存 技術(shù):FLASH 存儲容量:2Mb （256K x 8） 寫周期時(shí)間 - 字，頁:50μs 訪問時(shí)間:70ns 存儲器接口:并聯(lián) 電壓 - 電源:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C（TC） 安裝類型:通孔 封裝/外殼:32-DIP（0.600"，15.24mm） 供應(yīng)商器件封裝:32-DIP 基本零件編號:AT49BV002 標(biāo)準(zhǔn)包裝:12 |
| AT49BV002AN-70TI | 功能描述:IC FLASH 2MBIT 70NS 32TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 |
| AT49BV002AN-70TU | 功能描述:IC FLASH 2MBIT 70NS 32TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲器:RAM 存儲器類型:SDRAM 存儲容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869 |
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