參數(shù)資料
型號(hào): AT45DB161D_06
廠(chǎng)商: Atmel Corp.
英文描述: AT45DB161D_06
中文描述: AT45DB161D_06
文件頁(yè)數(shù): 1/53頁(yè)
文件大小: 1094K
代理商: AT45DB161D_06
Features
Single 2.5V - 3.6V or 2.7V - 3.6V Supply
RapidS
Serial Interface: 66 MHz Maximum Clock Frequency
– SPI Compatible Modes 0 and 3
User Configurable Page Size
– 512 Bytes per Page
– 528 Bytes per Page
Page Program Operation
– Intelligent Programming Operation
– 4,096 Pages (512/528 Bytes/Page) Main Memory
Flexible Erase Options
– Page Erase (512 Bytes)
– Block Erase (4 Kbytes)
– Sector Erase (128 Kbytes)
– Chip Erase (16 Mbits)
Two SRAM Data Buffers (512/528 Bytes)
– Allows Receiving of Data while Reprogramming the Flash Array
Continuous Read Capability through Entire Array
– Ideal for Code Shadowing Applications
Low-power Dissipation
– 7 mA Active Read Current Typical
– 25 μA Standby Current Typical
– 9 μA Deep Power Down Typical
Hardware and Software Data Protection Features
– Individual Sector
Sector Lockdown for Secure Code and Data Storage
– Individual Sector
Security: 128-byte Security Register
– 64-byte User Programmable Space
– Unique 64-byte Device Identifier
JEDEC Standard Manufacturer and Device ID Read
100,000 Program/Erase Cycles Per Page Minimum
Data Retention – 20 Years
Industrial Temperature Range
Green (Pb/Halide-free/RoHS Compliant) Packaging Options
1.
The AT45DB161D is a 2.5-volt or 2.7-volt, serial-interface sequential access Flash
memory ideally suited for a wide variety of digital voice-, image-, program code- and
data-storage applications. The AT45DB161D supports RapidS serial interface for
applications requiring very high speed operations. RapidS serial interface is SPI com-
patible for frequencies up to 66 MHz. Its 17,301,504 bits of memory are organized as
4,096 pages of 512 bytes or 528 bytes each. In addition to the main memory, the
AT45DB161D also contains two SRAM buffers of 512/528 bytes each. The buffers
allow the receiving of data while a page in the main Memory is being reprogrammed,
as well as writing a continuous data stream. EEPROM emulation (bit or byte alterabil-
ity) is easily handled with a self-contained three step read-modify-write operation.
Unlike conventional Flash memories that are accessed randomly with multiple
Description
16-megabit
2.5-volt or
2.7-volt
DataFlash
AT45DB161D
3500H–DFLASH–09/06
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AT45DB161D-CCU-SL383 制造商:Adesto Technologies Corporation 功能描述:9BALL BGA, IND TEMP, 2.7V,T&R - Tape and Reel
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