參數(shù)資料
型號(hào)： AT45DB161B-RC
廠(chǎng)商： ATMEL CORP
元件分類(lèi)： DRAM
英文描述： 16 MEGABIT 2.5-VOLT ONLY OR 2.7-VOLT ONLY DATAFLASH
中文描述： 16M X 1 FLASH 2.7V PROM, PDSO28
封裝： 0.300 INCH, PLASTIC, SOIC-28
文件頁(yè)數(shù)： 6/33頁(yè)
文件大?。?/td> 351K
代理商： AT45DB161B-RC
6
AT45DB161B
2224I–DFLSH–10/04
BUFFER TO MAIN MEMORY PAGE PROGRAM WITHOUT BUILT-IN ERASE:
A
previously erased page within main memory can be programmed with the contents of
either buffer 1 or buffer 2. To start the operation, an 8-bit opcode, 88H for buffer 1 or
89H for buffer 2, must be followed by the two reserved bits, 12 address bits
(PA11 - PA0) that specify the page in the main memory to be written, and ten additional
don’t care bits. When a low-to-high transition occurs on the CS pin, the part will program
the data stored in the buffer into the specified page in the main memory. It is necessary
that the page in main memory that is being programmed has been previously erased.
The programming of the page is internally self-timed and should take place in a maxi-
mum time of t
P
. During this time, the status register will indicate that the part is busy.
Successive page programming operations without doing a page erase are not recom-
mended. In other words, changing bytes within a page from a “1” to a “0” during multiple
page programming operations without erasing that page is not recommended.
PAGE ERASE:
The optional Page Erase command can be used to individually erase
any page in the main memory array allowing the Buffer to Main Memory Page Program
without Built-in Erase command to be utilized at a later time. To perform a Page Erase,
an opcode of 81H must be loaded into the device, followed by two reserved bits,
12 address bits (PA11 - PA0), and ten don’t care bits. The 12 address bits are used to
specify which page of the memory array is to be erased. When a low-to-high transition
occurs on the CS pin, the part will erase the selected page to 1s. The erase operation is
internally self-timed and should take place in a maximum time of t
PE
. During this time,
the status register will indicate that the part is busy.
BLOCK ERASE:
A block of eight pages can be erased at one time allowing the Buffer
to Main Memory Page Program without Built-in Erase command to be utilized to reduce
programming times when writing large amounts of data to the device. To perform a
Block Erase, an opcode of 50H must be loaded into the device, followed by two
reserved bits, nine address bits (PA11 - PA3), and 13 don’t care bits. The nine address
bits are used to specify which block of eight pages is to be erased. When a low-to-high
transition occurs on the CS pin, the part will erase the selected block of eight pages to
1s. The erase operation is internally self-timed and should take place in a maximum
time of t
BE
. During this time, the status register will indicate that the part is busy.
Block Erase Addressing
PA11
PA10
PA9
PA8
PA7
PA6
PA5
PA4
PA3
PA2
PA1
PA0
Block
0
0
0
0
0
0
0
0
0
X
X
X
0
0
0
0
0
0
0
0
0
1
X
X
X
1
0
0
0
0
0
0
0
1
0
X
X
X
2
0
0
0
0
0
0
0
1
1
X
X
X
3
1
1
1
1
1
1
1
0
0
X
X
X
508
1
1
1
1
1
1
1
0
1
X
X
X
509
1
1
1
1
1
1
1
1
0
X
X
X
510
1
1
1
1
1
1
1
1
1
X
X
X
511
相關(guān)PDF資料
PDF描述
AT45DB161B-RC-2.5 16 MEGABIT 2.5-VOLT ONLY OR 2.7-VOLT ONLY DATAFLASH
AT45DB161B-RI 16 MEGABIT 2.5-VOLT ONLY OR 2.7-VOLT ONLY DATAFLASH
AT45DB161B-RU 16 MEGABIT 2.5-VOLT ONLY OR 2.7-VOLT ONLY DATAFLASH
AT45DB161B-TC 16 MEGABIT 2.5-VOLT ONLY OR 2.7-VOLT ONLY DATAFLASH
AT45DB161B-TC-2.5 16 MEGABIT 2.5-VOLT ONLY OR 2.7-VOLT ONLY DATAFLASH
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AT45DB161B-RC-2.5 功能描述:IC FLASH 16MBIT 20MHZ 28SOIC RoHS:否 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:378 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類(lèi)型:FLASH 存儲(chǔ)容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-CBGA 供應(yīng)商設(shè)備封裝:48-CBGA（7x7） 包裝:托盤(pán)
AT45DB161B-RI 功能描述:閃存 16M Serial RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線(xiàn)寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪(fǎng)問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
AT45DB161B-RI-2.5 功能描述:IC FLASH 16MBIT 20MHZ 28SOIC RoHS:否 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:378 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類(lèi)型:FLASH 存儲(chǔ)容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-CBGA 供應(yīng)商設(shè)備封裝:48-CBGA（7x7） 包裝:托盤(pán)
AT45DB161B-RU 制造商:ATMEL 制造商全稱(chēng):ATMEL Corporation 功能描述:16 MEGABIT 2.5-VOLT ONLY OR 2.7-VOLT ONLY DATAFLASH
AT45DB161B-TC 功能描述:閃存 16M bit RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線(xiàn)寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪(fǎng)問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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