參數(shù)資料
型號(hào)： AT45DB081D
廠商： Atmel Corp.
英文描述： 8-megabit 2.5-volt or 2.7-volt DataFlash
中文描述： 8兆位2.5伏或2.7伏的DataFlash
文件頁數(shù)： 1/53頁
文件大?。?/td> 1105K
代理商： AT45DB081D
Features
Single 2.5V or 2.7V to 3.6V Supply
RapidS
Serial Interface: 66 MHz Maximum Clock Frequency
– SPI Compatible Modes 0 and 3
User Configurable Page Size
– 256 Bytes per Page
– 264 Bytes per Page
Page Program Operation
– Intelligent Programming Operation
– 4,096 Pages (256/264 Bytes/Page) Main Memory
Flexible Erase Options
– Page Erase (256 Bytes)
– Block Erase (2 Kbytes)
– Sector Erase (64 Kbytes)
– Chip Erase (8 Mbits)
Two SRAM Data Buffers (256/264 Bytes)
– Allows Receiving of Data while Reprogramming the Flash Array
Continuous Read Capability through Entire Array
– Ideal for Code Shadowing Applications
Low-power Dissipation
– 7 mA Active Read Current Typical
– 25 μA Standby Current Typical
– 5 μA Deep Power Down Typical
Hardware and Software Data Protection Features
– Individual Sector
Sector Lockdown for Secure Code and Data Storage
– Individual Sector
Security: 128-byte Security Register
– 64-byte User Programmable Space
– Unique 64-byte Device Identifier
JEDEC Standard Manufacturer and Device ID Read
100,000 Program/Erase Cycles Per Page Minimum
Data Retention – 20 Years
Industrial Temperature Range
Green (Pb/Halide-free/RoHS Compliant) Packaging Options
1.
The AT45DB081D is a 2.5V or 2.7V, serial-interface Flash memory ideally suited for a
wide variety of digital voice-, image-, program code- and data-storage applications.
The AT45DB081D supports RapidS serial interface for applications requiring very
high speed operations. RapidS serial interface is SPI compatible for frequencies up to
66 MHz. Its 8,650,752 bits of memory are organized as 4,096 pages of 256 bytes or
264 bytes each. In addition to the main memory, the AT45DB081D also contains two
SRAM buffers of 256/264 bytes each. The buffers allow the receiving of data while a
page in the main Memory is being reprogrammed, as well as writing a continuous
data stream. EEPROM emulation (bit or byte alterability) is easily handled with a self-
contained three step read-modify-write operation. Unlike conventional Flash memo-
ries that are accessed randomly with multiple address lines and a parallel interface,
Description
8-megabit
2.5-volt or
2.7-volt
DataFlash
AT45DB081D
3596E–DFLASH–02/07
相關(guān)PDF資料
PDF描述
AT45DB081D_07 8-megabit 2.5-volt or 2.7-volt DataFlash
AT45DB081D-MU 8-megabit 2.5-volt or 2.7-volt DataFlash
AT45DB081D-MU-2.5 8-megabit 2.5-volt or 2.7-volt DataFlash
AT45DB081D-SSU 8-megabit 2.5-volt or 2.7-volt DataFlash
AT45DB081D-SSU-2.5 8-megabit 2.5-volt or 2.7-volt DataFlash
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AT45DB081D_07 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:8-megabit 2.5-volt or 2.7-volt DataFlash
AT45DB081D_08 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:8-megabit 2.5-volt or 2.7-volt DataFlash
AT45DB081D_09 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:8-megabit 2.5-volt or 2.7-volt DataFlash
AT45DB081D_13 制造商:AD 制造商全稱:Analog Devices 功能描述:8-megabit 2.5V or 2.7V DataFlash
AT45DB081D-DWF 制造商:Adesto Technologies Corporation 功能描述:WHOLE WAFER, NO BACKGRIND - Gel-pak, waffle pack, wafer, diced wafer on film
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