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參數(shù)資料
| 型號(hào)： | AT42QT2161-MMU |
| 廠商： | Atmel |
| 文件頁(yè)數(shù)： | 13/14頁(yè) |
| 文件大小： | 0K |
| 描述： | IC TOUCH SENSOR 16KEY 28QFN |
| 標(biāo)準(zhǔn)包裝： | 1 |
| 系列： | QMatrix™, QSlide™ |
| 類(lèi)型： | 電容性 |
| 觸摸面板接口： | 8，2 線 |
| 輸入數(shù)/鍵： | 16 鍵，滑塊 |
| 分辨率（位）： | 10 b |
| 評(píng)估套件： | * |
| 數(shù)據(jù)接口： | I²C，串行 |
| 電壓基準(zhǔn)： | 內(nèi)部 |
| 電源電壓： | 1.8 V ~ 5.5 V |
| 電流 - 電源： | 1.14mA |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類(lèi)型： | 表面貼裝 |
| 封裝/外殼： | 28-VFQFN 裸露焊盤(pán) |
| 供應(yīng)商設(shè)備封裝： | 28-VQFN |
| 包裝： | 標(biāo)準(zhǔn)包裝 |
| 其它名稱(chēng)： | AT42QT2161-MMUDKR |
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8
9614A–AT42–08/10
AT42QT2161
3.2
Burst Paring
Keys that are disabled by setting their burst length to zero have their bursts removed from the
scan sequence to save scan time and thus power. The QT2161 operates on a fixed 16 ms cycle
and will go to sleep after all acquisitions and processing is done till the next 16 ms cycle starts.
As a consequence, the fewer keys, the less power is consumed.
3.3
Cs Sample Capacitor Operation
Cs capacitors (Cs0 – Cs1) absorb charge from the key electrodes on the rising edge of each X
pulse. On each falling edge of X, the Y matrix line is clamped to ground to allow the electrode
and wiring charges to neutralize in preparation for the next pulse. With each X pulse charge
accumulates on Cs causing a staircase increase in its differential voltage.
After the burst completes, the device clamps the Y line to ground causing the opposite terminal
to go negative. The charge on Cs is then measured using an external resistor to ramp the
negative terminal upwards until a zero crossing is achieved. The time required to zero cross
becomes the measurement result.
The Cs capacitors should be connected as shown in Figure 1-1 on page 4. The value of these
capacitors is not critical but 4.7 nF is recommended for most cases. They should be 10 percent
X7R ceramic. If the transverse capacitive coupling from X to Y is large enough the voltage on a
Cs capacitor can saturate, destroying gain. In such cases the burst length should be reduced
and/or the Cs value increased. See Section 3.4.
If a Y line is not used its corresponding Cs capacitor may be omitted and the pins left floating.
3.4
Sample Capacitor Saturation
Cs voltage saturation at a pin YnB is shown in Figure 3-1. Saturation begins to occur when the
voltage at a YnB pin becomes more negative than -0.25V at the end of the burst. This
nonlinearity is caused by excessive voltage accumulation on Cs inducing conduction in the pin
protection diodes. This badly saturated signal destroys key gain and introduces a strong thermal
coefficient which can cause phantom detection. The cause of this is either from the burst length
being too long, the Cs value being too small, or the X – Y transfer coupling being too large.
Solutions include loosening up the key structure interleaving, more separation of the X and Y
lines on the PCB, increasing Cs, and decreasing the burst length.
Increasing Cs will make the part slower; decreasing burst length will make it less sensitive. A
better PCB layout and a looser key structure (up to a point) have no negative effects.
Cs voltages should be observed on an oscilloscope with the matrix layer bonded to the panel
material; if the Rs side of any Cs ramps more negative than -0.25 volts during any burst (not
counting overshoot spikes which are probe artifacts), there is a potential saturation problem.
Figure 3-2 shows a defective waveform similar to that of Figure 3-1, but in this case the
distortion is caused by excessive stray capacitance coupling from the Y line to AC ground; for
example, from running too near and too far alongside a ground trace, ground plane, or other
traces. The excess coupling causes the charge-transfer effect to dissipate a significant portion of
the received charge from a key into the stray capacitance. This phenomenon is more subtle; it
can be best detected by increasing BL to a high count and watching what the waveform does as
it descends towards and below -0.25V. The waveform will appear deceptively straight, but it will
slowly start to flatten even before the -0.25V level is reached.
A correct waveform is shown in Figure 3-3. Note that the bottom edge of the bottom trace is
substantially straight (ignoring the downward spikes).
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT42QT2161-MMU QS519 | 制造商:Atmel Corporation 功能描述:QSLIDE, 16 KEY - QMATRIX SENSO |
| AT42QT2640-AU | 功能描述:Capacitive Touch Buttons, Slider, Wheel 44-TQFP (10x10) 制造商:atmel 系列:QMatrix?? 包裝:托盤(pán) 零件狀態(tài):有效 類(lèi)型:按鈕，滑塊，撥輪 接近探測(cè):無(wú) 輸入數(shù):最高 64 LED 驅(qū)動(dòng)器通道:- 接口:SPI 分辨率:11 b 電壓 - 電源:4.75 V ~ 5.25 V 電流 - 電源:13mA 工作溫度:-40°C ~ 105°C 封裝/外殼:44-TQFP 供應(yīng)商器件封裝:44-TQFP（10x10） 標(biāo)準(zhǔn)包裝:160 |
| AT42QT2640-AUR | 功能描述:64 CHANNEL QMATRIX FMEA EN60730 制造商:microchip technology 系列:QMatrix?? 包裝:剪切帶（CT） 零件狀態(tài):在售 類(lèi)型:按鈕，滑塊，撥輪 接近探測(cè):無(wú) 輸入數(shù):最高 64 LED 驅(qū)動(dòng)器通道:- 接口:SPI 分辨率:11 b 電壓 - 電源:4.75 V ~ 5.25 V 電流 - 電源:13mA 工作溫度:-40°C ~ 105°C 封裝/外殼:44-TQFP 供應(yīng)商器件封裝:44-TQFP（10x10） 標(biāo)準(zhǔn)包裝:1 |
| AT42QT4120 | 制造商:ATMEL 制造商全稱(chēng):ATMEL Corporation 功能描述:Patented spread-spectrum charge-transfer (transverse mode) |
| AT42QT4160 | 制造商:ATMEL 制造商全稱(chēng):ATMEL Corporation 功能描述:Patented spread-spectrum charge-transfer (transverse mode) |
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