參數(shù)資料
型號(hào): AT29LV512-25TC
廠商: ATMEL CORP
元件分類: DRAM
英文描述: High Speed CMOS Logic Quad 2-Input NAND Gates 14-PDIP -55 to 125
中文描述: 64K X 8 FLASH 3V PROM, 250 ns, PDSO32
封裝: 8 X 20 MM, PLASTIC, MO-142BD, TSOP1-32
文件頁(yè)數(shù): 1/10頁(yè)
文件大?。?/td> 456K
代理商: AT29LV512-25TC
AT29LV512
512K (64K x 8)
3-volt Only
CMOS Flash
Memory
Features
Single Supply Voltage, Range 3V to 3.6V
3-Volt-Only Read and Write Operation
Software Protected Programming
Low Power Dissipation
15 mA Active Current
20
μ
A CMOS Standby Current
Fast Read Access Time - 200 ns
Sector Program Operation
Single Cycle Reprogram (Erase and Program)
512 Sectors (128 bytes/sector)
Internal Address and Data Latches for 128-Bytes
Fast Sector Program Cycle Time - 20 ms Max.
Internal Program Control and Timer
DATA Polling for End of Program Detection
Typical Endurance > 10,000 Cycles
CMOS and TTL Compatible Inputs and Outputs
Commercial and Industrial Temperature Ranges
Description
The AT29LV512 is a 3-volt-only in-system Flash programmable erasable read only
memory (PEROM). Its 512K of memory is organized as 65,536 words by 8 bits. Manu-
factured with Atmel’s advanced nonvolatile CMOS technology, the device offers ac-
cess times to 200 ns with power dissipation of just 54 mW over the commercial tem-
perature range. When the device is deselected, the CMOS standby current is less
than 20
μ
A. The device endurance is such that any sector can typically be written to
in excess of 10,000 times.
(continued)
Pin Configurations
Pin Name
Function
A0 - A15
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7
Data Inputs/Outputs
NC
No Connect
TSOP Top View
Type 1
PLCC Top View
0177I
AT29LV512
4-43
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