- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄381449 > AT29LV040A-20TC (ATMEL CORP) 4-Bit Magnitude Comparator 16-PDIP -55 to 125 PDF資料下載
參數(shù)資料
| 型號(hào)： | AT29LV040A-20TC |
| 廠商： | ATMEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 4-Bit Magnitude Comparator 16-PDIP -55 to 125 |
| 中文描述： | 512K X 8 FLASH 3V PROM, 200 ns, PDSO32 |
| 封裝： | 8 X 20 MM, PLASTIC, MO-142BD, TSOP1-32 |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大?。?/td> | 432K |
| 代理商： | AT29LV040A-20TC |
4 Megabit
(512K x 8)
3-volt Only
256 Byte Sector
CMOS Flash
Memory
Features
Single Voltage, Range 3V to 3.6V Supply
3-Volt-Only Read and Write Operation
Software Protected Programming
Fast Read Access Time - 200 ns
Low Power Dissipation
15 mA Active Current
20
μ
A CMOS Standby Current
Sector Program Operation
Single Cycle Reprogram (Erase and Program)
2048 Sectors (256 bytes/sector)
Internal Address and Data Latches for 256-Bytes
Two 16 KB Boot Blocks with Lockout
Fast Sector Program Cycle Time - 20 ms Max.
Internal Program Control and Timer
DATA Polling for End of Program Detection
Typical Endurance > 10,000 Cycles
CMOS and TTL Compatible Inputs and Outputs
Commercial and Industrial Temperature Ranges
Description
The AT29LV040A is a 3-volt-only in-system Flash Programmable and Erasable Read
Only Memory (PEROM). Its 4 megabits of memory is organized as 524,288 words by
8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology,
the device offers access times up to 200 ns, and a low 54 mW power dissipation.
When the device is deselected, the CMOS standby current is less than 20
μ
A. The
device endurance is such that any sector can typically be written to in excess of
10,000 times. The programming algorithm is compatible with other devices in Atmel’s
3-volt-only Flash memories.
To allow for simple in-system reprogrammability, the AT29LV040A does not require
high input voltages for programming. Three-volt-only commands determine the opera-
tion of the device. Reading data out of the device is similar to reading from an EPROM.
Reprogramming the AT29LV040A is performed on a sector basis; 256-bytes of data
are loaded into the device and then simultaneously programmed.
During a reprogram cycle, the address locations and 256-bytes of data are captured
at microprocessor speed and internally latched, freeing the address and data bus for
other operations. Following the initiation of a program cycle, the device will automat-
ically erase the sector and then program the latched data using an internal control
timer. The end of a program cycle can be detected by DATA polling of I/O7. Once the
end of a program cycle has been detected, a new access for a read or program can
begin.
AT29LV040A
Pin Configurations
Pin Name
Function
A0 - A18
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7
Data Inputs/Outputs
NC
No Connect
TSOP Top View
Type 1
0334C
AT29LV040A
4-83
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT29LV040A-20TI | 4-Bit Magnitude Comparator 16-SOIC -55 to 125 |
| AT29LV040A-25TC | 4-Bit Magnitude Comparator 16-SOIC -55 to 125 |
| AT29LV040A-25TI | 4-Bit Magnitude Comparator 16-SOIC -55 to 125 |
| AT29LV040A | 512K x 8 3-volt Only 256-Byte Sector Flash Memory(512K x 8 3V 256字節(jié)扇區(qū)閃速存儲(chǔ)器) |
| AT29LV1024 | 4-Bit Magnitude Comparator 16-SOIC -55 to 125 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT29LV040A-20TI | 功能描述:閃存 FLASH 4M 512K X 3.3V 200NS IND TEMP RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| AT29LV040A-25DC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| AT29LV040A-25DI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| AT29LV040A-25JC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM|FLASH|512KX8|CMOS|LDCC|32PIN|PLASTIC |
| AT29LV040A-25JI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。