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參數(shù)資料
| 型號： | AT28HC64B-70TC |
| 廠商： | ATMEL CORP |
| 元件分類： | DRAM |
| 英文描述： | High Speed CMOS Logic Dual Binary Up-Counters 16-SOIC -55 to 125 |
| 中文描述： | 8K X 8 EEPROM 5V, 70 ns, PDSO28 |
| 封裝： | 8 X 13.40 MM, PLASTIC, MO-183, TSOP1-28 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 661K |
| 代理商： | AT28HC64B-70TC |
AT28HC64B
64K (8K x 8)
High Speed
CMOS
E
2
PROM with
Page Write and
Software Data
Protection
Features
Fast Read Access Time - 55 ns
Automatic Page Write Operation
Internal Address and Data Latches for 64-Bytes
Fast Write Cycle Times
Page Write Cycle Time: 10 ms Maximum
1 to 64-Byte Page Write Operation
Low Power Dissipation
40 mA Active Current
100
μ
A CMOS Standby Current
Hardware and Software Data Protection
DATA Polling and Toggle Bit for End of Write Detection
High Reliability CMOS Technology
Endurance: 100,000 Cycles
Data Retention: 10 Years
Single 5V
±
10% Supply
CMOS and TTL Compatible Inputs and Outputs
JEDEC Approved Byte-Wide Pinout
Commercial and Industrial Temperature Ranges
Note: PLCC package pins 1 and
17 are DON’T CONNECT.
PDIP, SOIC
Top View
PLCC
Top View
Pin Name
Function
A0 - A12
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7
Data Inputs/Outputs
NC
No Connect
DC
Don’t Connect
Pin Configurations
TSOP
Top View
Description
The AT28HC64B is a high-performance electrically erasable and programmable read
only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits.
Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers
access times to 55 ns with power dissipation of just 220 mW. When the device is
deselected, the CMOS standby current is less than 100
μ
A.
The AT28HC64B is accessed like a Static RAM for the read or write cycle without the
need for external components. The device contains a 64-byte page register to allow
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0274D
AT28HC64B
2-267
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT28HC64B-120 | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
| AT28HC64B-12JC | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
| AT28HC64B-12JI | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
| AT28HC64B-12PC | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
| AT28HC64B-12PI | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT28HC64B-70TI | 功能描述:電可擦除可編程只讀存儲(chǔ)器 1M 5V SDP 70NS IND TEMP RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| AT28HC64B-70TU | 功能描述:電可擦除可編程只讀存儲(chǔ)器 70ns RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| AT28HC64B-90JA | 功能描述:IC EEPROM 64KBIT 90NS 32PLCC RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:378 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:FLASH 存儲(chǔ)容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-CBGA 供應(yīng)商設(shè)備封裝:48-CBGA（7x7） 包裝:托盤 |
| AT28HC64B-90JC | 功能描述:電可擦除可編程只讀存儲(chǔ)器 1M 5V SDP - 90NS COM TEMP RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| AT28HC64B-90JI | 功能描述:電可擦除可編程只讀存儲(chǔ)器 1M 5V SDP - 90NS IND TEMP RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
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