參數(shù)資料
型號(hào): AT28C256F-25PI
廠商: ATMEL CORP
元件分類: DRAM
英文描述: 64K 8K x 8 Battery-Voltage CMOS E2PROM
中文描述: 32K X 8 EEPROM 5V, 250 ns, PDIP28
封裝: 0.600 INCH, PLASTIC, MS-011AB, DIP-28
文件頁(yè)數(shù): 4/14頁(yè)
文件大?。?/td> 762K
代理商: AT28C256F-25PI
Symbol
Parameter
Condition
Min
Max
Units
μ
A
μ
A
μ
A
μ
A
mA
I
LI
I
LO
Input Load Current
V
IN
= 0V to V
CC
+ 1V
V
I/O
= 0V to V
CC
10
Output Leakage Current
10
I
SB1
V
CC
Standby Current CMOS
CE = V
CC
- 0.3V to V
CC
+ 1V
Com., Ind.
200
Mil.
300
I
SB2
I
CC
V
IL
V
IH
V
OL
V
OH
V
CC
Standby Current TTL
V
CC
Active Current
Input Low Voltage
CE = 2.0V to V
CC
+ 1V
f = 5 MHz; I
OUT
= 0 mA
3
50
mA
0.8
V
Input High Voltage
2.0
V
Output Low Voltage
I
OL
= 2.1 mA
I
OH
= -400
μ
A
.45
V
Output High Voltage
2.4
V
DC Characteristics
AT28C256-15
AT28C256-20
AT28C256-25
AT28C256-35
Operating
Temperature (Case)
Com.
0°C - 70°C
0°C - 70°C
0°C - 70°C
Ind.
-40°C - 85°C
-40°C - 85°C
-40°C - 85°C
Mil.
-55°C - 125°C
5V
±
10%
-55°C - 125°C
5V
±
10%
-55°C - 125°C
5V
±
10%
-55°C - 125°C
5V
±
10%
V
CC
Power Supply
DC and AC Operating Range
Mode
CE
OE
WE
I/O
Read
Write
(2)
V
IL
V
IL
V
IH
X
V
IL
V
IH
X
(1)
V
IH
V
IL
X
D
OUT
D
IN
High Z
Standby/Write Inhibit
Write Inhibit
X
V
IH
X
Write Inhibit
X
V
IL
V
IH
V
H
(3)
3. V
H
= 12.0V
±
0.5V.
Output Disable
X
X
High Z
Chip Erase
Notes: 1. X can be V
IL
or V
IH
.
2. Refer to AC Programming Waveforms.
V
IL
V
IL
High Z
Operating Modes
DEVICE IDENTIFICATION:
An extra 64-bytes of
E
2
PROM memory are available to the user for device
identification. By raising A9 to 12V
±
0.5V and using ad-
dress locations 7FC0H to 7FFFH the additional bytes may
be written to or read from in the same manner as the regu-
lar memory array.
OPTIONAL CHIP ERASE MODE:
The entire device can
be erased using a 6-byte software code. Please see Soft-
ware Chip Erase application note for details.
Device Operation
(Continued)
2-220
AT28C256
相關(guān)PDF資料
PDF描述
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AT28C256F-25TI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM
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