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參數(shù)資料
| 型號： | AT28C010-12DK-SV |
| 廠商： | ATMEL CORP |
| 元件分類： | DRAM |
| 英文描述： | Space 1-megabit (128K x 8) Paged Parallel EEPROMs |
| 中文描述： | 128K X 8 EEPROM 5V, 120 ns, CDFP32 |
| 封裝： | 0.435 INCH, BOTTOM BRAZED, CERAMIC, MO-115, DFP-32 |
| 文件頁數(shù)： | 1/17頁 |
| 文件大小： | 236K |
| 代理商： | AT28C010-12DK-SV |
Rev. 4259A–AERO–06/03
1
Features
Fast Read Access Time – 120 ns
Automatic Page Write Operation
–
Internal Address and Data Latches for 128 Bytes
–
Internal Control Timer
Fast Write Cycle Time
–
Page Write Cycle Time
–
10 ms Maximum
–
1 to 128-byte Page Write Operation
Low Power Dissipation
–
80 mA Active Current
–
300
μA CMOS Standby Current
Hardware and Software Data Protection
DATA Polling for End of Write Detection
High Reliability CMOS Technology
–
Endurance: 10
4
or 10
5
Cycles
–
Data Retention: 10 Years
Operating Range: 4.5V to 5.5V, -55 to +125
°
C
CMOS and TTL Compatible Inputs and Outputs
Batch Tested for 10 Krad TID and 70 MeV Latch-up Capability
JEDEC Approved byte-Wide Pinout
435 Mils Wide 32-Pin Flat Pack Package
Description
The AT28C010-12DK is a high-performance Electrically Erasable and Programmable
Read-Only Memory. Its one megabit of memory is organized as 131,072 words by 8
bits. Manufactured with Atmel
’
s advanced nonvolatile CMOS technology, the device
offers access times to 120 ns with power dissipation of just 440 mW. When the device
is deselected, the CMOS standby current is less than 300
μ
A.
The AT28C010-12DK is accessed like a Static RAM for the read or write cycle without
the need for external components. The device contains a 128-byte page register to
allow writing of up to 128 bytes simultaneously. During a write cycle, the address and
1 to 128 bytes of data are internally latched, freeing the address and data bus for
other operations. Following the initiation of a write cycle, the device will automatically
write the latched data using an internal control timer. The end of a write cycle can be
detected by DATA POLLING of I/O7. Once the end of a write cycle has been detected
a new access for a read or write can begin.
Atmel's 28C010 has additional features to ensure high quality in manufacturing. The
device utilizes internal error correction for extended endurance and improved data
retention characteristics. An optional software data protection mechanism is available
to guard against inadvertent writes. The device also includes an extra 128 bytes of
EEPROM for device identification or tracking.
AT28C010-12DK Mil
Space
1-megabit
(128K x 8)
Paged Parallel
EEPROMs
AT28C010-12DK
Preliminary
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT28C010 | High Speed CMOS Logic Triple 3-Input OR Gates 14-SOIC -55 to 125 |
| AT28C010-12 | High Speed CMOS Logic Triple 3-Input OR Gates 14-SOIC -55 to 125 |
| AT28C010-12JC | High Speed CMOS Logic Triple 3-Input OR Gates 14-SOIC -55 to 125 |
| AT28C010-12JI | High Speed CMOS Logic Triple 3-Input OR Gates 14-SO -55 to 125 |
| AT28C010-12PC | High Speed CMOS Logic Triple 3-Input OR Gates 14-SO -55 to 125 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT28C010-12DM/883 | 功能描述:電可擦除可編程只讀存儲器 1M 5V SDP - 120NS MILTEM 883C RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| AT28C010-12EM/883 | 功能描述:電可擦除可編程只讀存儲器 1M 5V SDP - 120NS 32LCC 883C RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| AT28C010-12EM/883 SL105 | 制造商:Atmel Corporation 功能描述:EEPROM PARALLEL 1MBIT 128KX8 5V 32CLCC - Rail/Tube |
| AT28C010-12FC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM |
| AT28C010-12FI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM |
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