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參數(shù)資料
| 型號： | AT28BV64-30SI |
| 廠商： | ATMEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
| 中文描述： | 8K X 8 EEPROM 3V, 300 ns, PDSO28 |
| 封裝： | 0.300 INCH, PLASTIC, SOIC-28 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 410K |
| 代理商： | AT28BV64-30SI |
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AT28BV64
64K (8K x 8)
Battery-Voltage
CMOS
E
2
PROM
Features
2.7V to 3.6V Supply
Full Read and Write Operation
Low Power Dissipation
8 mA Active Current
50
μ
A CMOS Standby Current
Read Access Time - 300 ns
Byte Write - 3 ms
Direct Microprocessor Control
DATA Polling
READY/BUSY Open Drain Output
High Reliability CMOS Technology
Endurance: 100,000 Cycles
Data Retention: 10 Years
JEDEC Approved Byte-Wide Pinout
Commercial and Industrial Temperature Ranges
Description
The AT28BV64 is a low-voltage, low-power Electrically Erasable and Programmable
Read Only Memory specifically designed for battery powered applications. Its 64K of
memory is organized 8,192 words by 8 bits. Manufactured with Atmel’s advanced
nonvolatile CMOS technology, the device offers access times to 200 ns with power
dissipation less than 30 mW. When the device is deselected the standby current is
less than 50
μ
A.
The AT28BV64 is accessed like a Static RAM for the read or write cycles without the
need for external components. During a byte write, the address and data are latched
internally, freeing the microprocessor address and data bus for other operations. Fol-
PLCC Top View
TSOP Top View
PDIP, SOIC Top View
Pin Name
Function
A0 - A12
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7
Data Inputs/Outputs
RDY/BUSY
Ready/Busy Output
NC
No Connect
DC
Don’t Connect
Pin Configurations
0493A
AT28BV64
2-127
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT28BV64-30TC | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
| AT28BV64-30TI | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
| AT28C010-12DK | Space 1-megabit (128K x 8) Paged Parallel EEPROMs |
| AT28C010-12DK-E | Space 1-megabit (128K x 8) Paged Parallel EEPROMs |
| AT28C010-12DK-M | Space 1-megabit (128K x 8) Paged Parallel EEPROMs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT28BV64-30TC | 功能描述:IC EEPROM 64KBIT 300NS 28TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:32 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:1M (128K x 8) 速度:120ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:32-LCC（J 形引線） 供應(yīng)商設(shè)備封裝:32-PLCC 包裝:管件 其它名稱:AT49BV00112JC |
| AT28BV64-30TI | 功能描述:IC EEPROM 64KBIT 300NS 28TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:32 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:1M (128K x 8) 速度:120ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:32-LCC（J 形引線） 供應(yīng)商設(shè)備封裝:32-PLCC 包裝:管件 其它名稱:AT49BV00112JC |
| AT28BV64B | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM with Page Write and Software Data Protection |
| AT28BV64B_06 | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection |
| AT28BV64B_09 | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection |
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