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參數資料
| 型號： | AT28BV256-20TI |
| 元件分類： | EEPROM |
| 英文描述： | 128Kx8 EEPROM |
| 中文描述： | 128Kx8 EEPROM |
| 文件頁數： | 5/12頁 |
| 文件大小： | 285K |
| 代理商： | AT28BV256-20TI |
AT28BV256
2
The AT28BV256 is accessed like a Static RAM for the read
or write cycle without the need for external components.
The device contains a 64-byte page register to allow writing
of up to 64 bytes simultaneously. During a write cycle, the
addresses and 1 to 64 bytes of data are internally latched,
freeing the address and data bus for other operations. Fol-
lowing the initiation of a write cycle, the device will automat-
ically write the latched data using an internal control timer.
The end of a write cycle can be detected by DATA polling
of I/O7. Once the end of a write cycle has been detected a
new access for a read or write can begin.
Atmel’s 28BV256 has additional features to ensure high
quality and manufacturability. The device utilizes internal
error correction for extended endurance and improved data
retention characteristics. An optional software data protec-
tion mechanism is available to guard against inadvertent
writes. The device also includes an extra 64 bytes of
EEPROM for device identification or tracking.
Block Diagram
Absolute Maximum Ratings*
Temperature under Bias ................................ -55°C to +125°C
*NOTICE:
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability
Storage Temperature ..................................... -65°C to +150°C
All Input Voltages (including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to VCC + 0.6V
Voltage on OE and A9
with Respect to Ground ...................................-0.6V to +13.5V
相關PDF資料 |
PDF描述 |
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| AT28BV256-25JC | 128Kx8 EEPROM |
| AT28BV256-25JI | 128Kx8 EEPROM |
| AT28BV256-25PC | 128Kx8 EEPROM |
| AT28BV256-25PI | 128Kx8 EEPROM |
| AT28BV256-25SC | 128Kx8 EEPROM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AT28BV256-20TI SL383 | 制造商:Atmel Corporation 功能描述:EEPROM Parallel 256K-Bit 32K x 8 3.3V 28-Pin TSOP-I T/R |
| AT28BV256-20TU | 功能描述:電可擦除可編程只讀存儲器 256K 32K x 8 200 ns 2.7V-3.6V RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數據保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| AT28BV256-20TU SL235 | 制造商:Atmel Corporation 功能描述: |
| AT28BV256-20TU SL383 | 制造商:Atmel Corporation 功能描述:EEPROM Parallel 256K-Bit 32K x 8 3.3V 28-Pin TSOP-I T/R 制造商:Atmel Corporation 功能描述:EEPROM PARALLEL 256KBIT 32KX8 3.3V 28TSOP-I - Tape and Reel |
| AT28BV256-20TU-235 | 功能描述:IC EEPROM 256KBIT 200NS 28TSOP 制造商:microchip technology 系列:- 包裝:剪切帶（CT） 零件狀態(tài):在售 存儲器類型:非易失 存儲器格式:EEPROM 技術:EEPROM 存儲容量:256Kb （32K x 8） 寫周期時間 - 字，頁:10ms 訪問時間:200ns 存儲器接口:并聯 電壓 - 電源:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C（TC） 安裝類型:表面貼裝 封裝/外殼:28-TSSOP（0.465"，11.80mm 寬） 供應商器件封裝:28-TSOP 標準包裝:1 |
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