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參數(shù)資料
| 型號(hào)： | AT28BV256-20SI |
| 元件分類： | EEPROM |
| 英文描述： | 128Kx8 EEPROM |
| 中文描述： | 128Kx8 EEPROM |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大?。?/td> | 285K |
| 代理商： | AT28BV256-20SI |
AT28BV256
2
The AT28BV256 is accessed like a Static RAM for the read
or write cycle without the need for external components.
The device contains a 64-byte page register to allow writing
of up to 64 bytes simultaneously. During a write cycle, the
addresses and 1 to 64 bytes of data are internally latched,
freeing the address and data bus for other operations. Fol-
lowing the initiation of a write cycle, the device will automat-
ically write the latched data using an internal control timer.
The end of a write cycle can be detected by DATA polling
of I/O7. Once the end of a write cycle has been detected a
new access for a read or write can begin.
Atmel’s 28BV256 has additional features to ensure high
quality and manufacturability. The device utilizes internal
error correction for extended endurance and improved data
retention characteristics. An optional software data protec-
tion mechanism is available to guard against inadvertent
writes. The device also includes an extra 64 bytes of
EEPROM for device identification or tracking.
Block Diagram
Absolute Maximum Ratings*
Temperature under Bias ................................ -55°C to +125°C
*NOTICE:
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability
Storage Temperature ..................................... -65°C to +150°C
All Input Voltages (including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to VCC + 0.6V
Voltage on OE and A9
with Respect to Ground ...................................-0.6V to +13.5V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT28BV256-20TC | 128Kx8 EEPROM |
| AT28BV256-20TI | 128Kx8 EEPROM |
| AT28BV256-25JC | 128Kx8 EEPROM |
| AT28BV256-25JI | 128Kx8 EEPROM |
| AT28BV256-25PC | 128Kx8 EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT28BV256-20SU | 功能描述:電可擦除可編程只讀存儲(chǔ)器 256K 2.7V - 3.6V SDP- 200NS IND TEMP RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| AT28BV256-20SU SL383 | 制造商:Atmel Corporation 功能描述:EEPROM PARALLEL 256KBIT 32KX8 3.3V 28SOIC - Tape and Reel |
| AT28BV256-20SU-T | 功能描述:200NS, SOIC, IND TEMP, GREEN 制造商:microchip technology 系列:- 包裝:剪切帶（CT） 零件狀態(tài):在售 存儲(chǔ)器類型:非易失 存儲(chǔ)器格式:EEPROM 技術(shù):EEPROM 存儲(chǔ)容量:256Kb （32K x 8） 寫周期時(shí)間 - 字，頁(yè):10ms 訪問(wèn)時(shí)間:200ns 存儲(chǔ)器接口:并聯(lián) 電壓 - 電源:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C（TC） 安裝類型:表面貼裝 封裝/外殼:28-SOIC（0.295"，7.50mm 寬） 供應(yīng)商器件封裝:28-SOIC 標(biāo)準(zhǔn)包裝:1 |
| AT28BV256-20TA | 功能描述:IC EEPROM 256KBIT 200NS 28TSOP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:378 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:FLASH 存儲(chǔ)容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-CBGA 供應(yīng)商設(shè)備封裝:48-CBGA（7x7） 包裝:托盤 |
| AT28BV256-20TC | 功能描述:電可擦除可編程只讀存儲(chǔ)器 256K 2.7V - 3.6V SDP-200NS COM TEMP RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
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