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參數(shù)資料
| 型號： | AT27BV512 |
| 廠商： | Atmel Corp. |
| 英文描述： | 512K 64K x 8 Unregulated Battery-Voltage High Speed OTP CMOS EPROM |
| 中文描述： | 為512k 64KX8的無管制的電池電壓高速檢察官辦公室的CMOS存儲器 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 229K |
| 代理商： | AT27BV512 |
AT27BV512
512K (64K x 8)
Unregulated
Battery-Voltage
High Speed
OTP
CMOS EPROM
Features
Fast Read Access Time - 90 ns
Dual Voltage Range Operation
Unregulated Battery Power Supply Range, 2.7V to 3.6V
or Standard 5V
±
10% Supply Range
Pin Compatible with JEDEC Standard AT27C512
Low Power CMOS Operation
20
μ
A max. (less than 1
μ
A typical) Standby for V
CC
= 3.6V
29 mW max. Active at 5 MHz for V
CC
= 3.6V
JEDEC Standard Surface Mount Packages
32-Lead PLCC
28-Lead 330-mil SOIC
28-Lead TSOP
High Reliability CMOS Technology
2,000V ESD Protection
200 mA Latchup Immunity
Rapid
Programming Algorithm - 100
μ
s/byte (typical)
CMOS and TTL Compatible Inputs and Outputs
JEDEC Standard for LVTTL and LVBO
Integrated Product Identification Code
Commercial and Industrial Temperature Ranges
Description
The AT27BV512 is a high performance, low power, low voltage 524,288 bit one-time
programmable read only memory (OTP EPROM) organized as 64K by 8 bits. It re-
quires only one supply in the range of 2.7V to 3.6V in normal read mode operation,
making it ideal for fast, portable systems using either regulated or unregulated battery
power.
Atmel’s innovative design techniques provide fast speeds that rival 5V parts while
keeping the low power consumption of a 3V supply. At V
CC
= 2.7V, any byte can be
accessed in less than 90 ns. With a typical power consumption of only 18 mW at 5
MHz and V
CC
= 3V, the AT27BV512 consumes less than one fifth the power of a
standard 5V EPROM.
Pin Configurations
(continued)
Pin Name
Function
A0 - A15
Addresses
O0 - O7
Outputs
CE
Chip Enable
OE/V
PP
Output Enable
NC
No Connect
0602A
SOIC Top View
Note: PLCC Package Pins 1 and
17 are DON’T CONNECT.
PLCC Top View
TSOP Top View
Type 1
AT27BV512
3-13
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT27BV512-12JC | 512K 64K x 8 Unregulated Battery-Voltage High Speed OTP CMOS EPROM |
| AT27BV512-12JI | 512K 64K x 8 Unregulated Battery-Voltage High Speed OTP CMOS EPROM |
| AT27BV512-12RC | 512K 64K x 8 Unregulated Battery-Voltage High Speed OTP CMOS EPROM |
| AT27BV512-12RI | 512K 64K x 8 Unregulated Battery-Voltage High Speed OTP CMOS EPROM |
| AT27BV512-12TC | 512K 64K x 8 Unregulated Battery-Voltage High Speed OTP CMOS EPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT27BV512_07 | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:512K (64K x 8) Unregulated Battery-Voltage High-Speed OTP EPROM |
| AT27BV512-12JC | 功能描述:IC OTP 512KBIT 120NS 32PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:1M (64K x 16) 速度:150ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 |
| AT27BV512-12JI | 功能描述:IC OTP 512KBIT 120NS 32PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:32 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:1M (128K x 8) 速度:120ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:32-LCC（J 形引線） 供應(yīng)商設(shè)備封裝:32-PLCC 包裝:管件 其它名稱:AT49BV00112JC |
| AT27BV512-12RC | 功能描述:IC OTP 512KBIT 120NS 28SOIC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:32 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:1M (128K x 8) 速度:120ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:32-LCC（J 形引線） 供應(yīng)商設(shè)備封裝:32-PLCC 包裝:管件 其它名稱:AT49BV00112JC |
| AT27BV512-12RI | 功能描述:IC OTP 512KBIT 120NS 28SOIC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:32 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:1M (128K x 8) 速度:120ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:32-LCC（J 形引線） 供應(yīng)商設(shè)備封裝:32-PLCC 包裝:管件 其它名稱:AT49BV00112JC |
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