
4
AT24C256C
8568A–SEEPR–11/08
2.
Memory Organization
AT24C256C, 256K SERIAL EEPROM: The 256K is internally organized as 512 pages of 64 bytes each. Random word
addressing requires a 15-bit data word address.
Table 2.
Pin Capacitance
(1)
Applicable over recommended operating range from:
TA = 25°C, f = 1.0 MHz, V
CC = +1.8V
Symbol
Test Condition
Max
Units
Conditions
C
I/O
Input/Output Capacitance (SDA)
8
pF
V
I/O = 0V
C
IN
Input Capacitance (A
0, A1, SCL)
6
pF
V
IN = 0V
Note:
1. This parameter is characterized and is not 100% tested.
Table 3.
DC Characteristics
Applicable over recommended operating range from:
T
AI = 40°C to +85°C, VCC = +1.8V to +5.5V (unless otherwise noted)
Symbol
Parameter
Test Condition
Min
Typ
Max
Units
V
CC1
Supply Voltage
1.8
5.5
V
I
CC1
Supply Current
V
CC = 5.0V
READ at 400 kHz
1.0
2.0
mA
I
CC2
Supply Current
V
CC = 5.0V
WRITE at 400 kHz
2.0
3.0
mA
I
SB1
Standby Current
(1.8V option)
V
CC = 1.8V
V
IN = VCC or VSS
1.0
μA
V
CC = 5.0V
6.0
μA
I
LI
Input Leakage
Currentt V
CC = 5.0V
V
IN = VCC or VSS
0.10
3.0
μA
I
LO
Output Leakage
Currentt V
CC = 5.0V
V
OUT = VCC or VSS
0.05
3.0
μA
V
IL
Input Low Level
(1)
0.6
V
CC x 0.3
V
IH
Input High Level
(1)
V
CC x 0.7
V
CC + 0.5
V
OL2
Output Low Level
V
CC = 3.0V
I
OL = 2.1 mA
0.4
V
OL1
Output Low Level
V
CC = 1.8V
I
OL = 0.15 mA
0.2
V
Note:
1. V
IL min and VIH max are reference only and are not tested.