參數(shù)資料
型號: AT12017-21
廠商: ADVANCED SEMICONDUCTOR INC
元件分類: 參考電壓二極管
英文描述: SILICON ABRUPT VARACTOR DIODE
中文描述: 22 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
封裝: HERMETIC SEALED, 21, 2 PIN
文件頁數(shù): 1/1頁
文件大?。?/td> 29K
代理商: AT12017-21
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV.A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
V
R
I
R
= 10
μ
A
V
F
I
F
= 1 mA
I
R
V
R
= 100 V
NONE
TEST CONDITIONS
MINIMUM TYPICAL
120
MAXIM
UNITS
V
1.0
V
100
μ
A
C
T
C
T
Q
V
R
= 4 V f = 1.0 MHz
C
T0
/ C
T120
f = 1.0 MHz
V
R
= 4 V f = 50 MHz
I
F
= 10 mA f = 2400 MHz
20
22
24
pF
9.0
---
300
---
R
S
0.9
SILICON ABRUPT VARACTOR DIODE
AT12017-21
DESCRIPTION:
The
AT12017
-21
is Designed for High
Performance RF and Microwave
Applications Requiring an Abrupt
Variable Capacitance Characteristic.
FEATURES INCLUDE:
High Tuning Ratio,
C
T
= 9.5 MIN.
High Quality Factor,
Q = 300 MIN.
Hermetic Package,
C
P
= .20 pF
L
S
= .42 nH
MAXIMUM RATINGS
I
F
200 mA
V
R
120 V
P
DISS
1.75W @ T
C
25
O
C
-55
O
C to +150
O
C
-55
O
C to +150
O
C
70
O
C/W
T
J
T
STG
θ
JC
PACKAGE STYLE 21
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