- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄357605 > AT-42036 General purpose transistor PDF資料下載
參數(shù)資料
| 型號： | AT-42036 |
| 英文描述： | General purpose transistor |
| 中文描述： | 通用晶體管 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 56K |
| 代理商： | AT-42036 |
2
AT-42035 Absolute Maximum Ratings
[1]
Absolute
Maximum
1.5
20
12
80
600
150
-65 to 150
Symbol
V
EBO
V
CBO
V
CEO
I
C
P
T
T
j
T
STG
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
CASE
= 25
°
C.
3. Derate at 5.7 mW/
°
C for T
C
> 95
°
C.
4. Storage above +150
°
C may tarnish the leads of this package making it difficult
to solder into a circuit.
5. The small spot size of this technique results in a higher, though more
accurate determination of
θ
jc
than do alternate methods. See MEASURE-
MENTS section
“
Thermal Resistance
”
for more information.
Parameter
Units
V
V
V
mA
mW
°
C
°
C
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
[2,3]
Junction Temperature
Storage Temperature
[4]
Thermal Resistance
[2,5]
:
θ
jc
= 175
°
C/W
Electrical Specifications, T
A
= 25
°
C
Symbol
|S
21E
|
2
Insertion Power Gain; V
CE
= 8 V, I
C
= 35 mA
Parameters and Test Conditions
[1]
Units Min.
dB
Typ. Max.
11.0
5.0
21.0
20.5
14.0
9.5
2.0
3.0
13.5
10.0
8.0
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz
f= 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
10.0
P
1 dB
Power Output @ 1 dB Gain Compression
V
CE
= 8 V, I
C
= 35 mA
1 dB Compressed Gain; V
CE
= 8 V, I
C
= 35 mA
dBm
G
1 dB
dB
NF
O
Optimum Noise Figure: V
CE
= 8 V, I
C
= 10 mA
dB
G
A
Gain @ NF
O
; V
CE
= 8 V, I
C
= 10 mA
dB
f
T
h
FE
I
CBO
I
EBO
C
CB
Gain Bandwidth Product: V
CE
= 8 V, I
C
= 35 mA
Forward Current Transfer Ratio; V
CE
= 8 V, I
C
= 35 mA
Collector Cutoff Current; V
CB
= 8 V
Emitter Cutoff Current; V
EB
= 1 V
Collector Base Capacitance
[1]
: V
CB
= 8 V, f = 1 MHz
GHz
—
μ
A
μ
A
pF
30
150
270
0.2
2.0
0.28
Notes:
1. For this test, the emitter is grounded.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT-42036-BLK | TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | MICRO-X |
| AT-42036-TR1 | TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | MICRO-X |
| AT002N5-00 | 0.3 MHz - 3000 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2 dB INSERTION LOSS-MAX |
| AT2117QB25Z1S-VFS | SINGLE COLOR LED, BLUE, 1.75 mm |
| AT230 | Analog IC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT-42036-BLK | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | MICRO-X |
| AT-42036-BLKG | 功能描述:射頻雙極小信號晶體管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT-42036-TR1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | MICRO-X |
| AT-42036-TR1G | 功能描述:射頻雙極小信號晶體管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT42070 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80MA I(C) | MICRO-X |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。