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參數(shù)資料
| 型號(hào)： | AT-41400-GP4 |
| 英文描述： | Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip |
| 中文描述： | 到6 GHz低噪聲硅雙極晶體管芯片 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 57K |
| 代理商： | AT-41400-GP4 |
4-102
AT-41400 Typical Scattering Parameters,
Common Emitter, Z
O
= 50
, T
A
= 25
°
C, V
CE
= 8 V, I
C
=10 mA
Freq.
S
11
GHz
Mag.
Ang.
0.1
.73
-39
0.5
.60
-121
1.0
.57
-156
1.5
.56
-172
2.0
.57
176
2.5
.57
170
3.0
.60
164
3.5
.60
157
4.0
.61
152
4.5
.63
147
5.0
.63
144
5.5
.65
139
6.0
66
136
S
21
Mag.
25.84
12.91
7.27
4.84
3.71
2.97
2.52
2.18
1.89
1.72
1.53
1.42
1.28
S
12
Mag.
.011
.031
.040
.048
.057
.066
.077
.090
.099
.116
.129
.141
.156
S
22
dB
28.3
22.2
17.2
13.7
11.4
9.5
8.0
6.8
5.5
4.7
3.7
3.1
2.1
Ang.
159
113
94
84
77
71
64
61
55
51
46
42
38
dB
-39.2
-30.2
-28.0
-26.4
-24.9
-23.6
-22.3
-20.9
-20.1
-18.7
-17.8
-17.0
-16.1
Ang.
75
48
51
59
66
69
72
77
79
81
80
82
83
Mag.
.94
.61
.50
.47
.46
.46
.45
.47
.47
.47
.48
.49
.50
Ang.
-12
-28
-25
-25
-24
-26
-28
-29
-30
-36
-40
-44
-47
AT-41400 Typical Scattering Parameters,
Common Emitter, Z
O
= 50
, T
A
= 25
°
C, V
CE
= 8 V, I
C
=25 mA
Freq.
S
11
GHz
Mag.
Ang.
0.1
.56
-60
0.5
.54
-145
1.0
.54
-170
1.5
.55
179
2.0
.56
170
2.5
.56
165
3.0
.58
159
3.5
.59
154
4.0
.60
149
4.5
.61
145
5.0
.62
142
5.5
.64
137
6.0
.65
134
A model for this device is available in the DEVICE MODELS section.
S
21
Mag.
39.07
15.00
8.03
5.30
4.04
3.24
2.75
2.37
2.06
1.87
1.67
1.54
1.40
S
12
Mag.
.009
.023
.033
.045
.058
.070
.083
.096
.108
.124
.136
.150
.165
S
22
dB
31.8
23.5
18.1
14.5
12.1
10.2
8.8
7.5
6.3
5.4
4.5
3.8
2.9
Ang.
152
104
90
82
76
72
65
62
57
53
49
44
41
dB
-40.9
-32.8
-29.6
-26.9
-24.7
-23.1
-21.6
-20.4
-19.3
-18.1
-17.3
-16.5
-15.7
Ang.
69
56
65
72
75
78
79
82
83
84
83
85
84
Mag.
.87
.49
.42
.41
.41
.40
.40
.41
.42
.42
.43
.42
.44
Ang.
-18
-28
-23
-22
-23
-23
-25
-26
-28
-33
-36
-40
-45
AT-41400 Noise Parameters:
V
CE
= 8 V, I
C
= 10 mA
Freq.
GHz
0.1
0.5
1.0
2.0
4.0
NF
O
dB
1.2
1.2
1.3
1.6
3.0
Γ
opt
Mag
.12
.10
.06
.24
.52
Ang
R
N
/50
3
0.17
0.17
0.16
0.16
0.18
15
27
163
-153
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