參數(shù)資料
型號(hào): AT-38086
英文描述: 4.8 V NPN Silicon Bipolar Common Emitter Transistor(4.8 V NPN 硅雙極型普通射極晶體管)
中文描述: 4.8 V NPN硅雙極晶體管發(fā)射極普通(4.8 V npn型硅雙極型普通射極晶體管)
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文件大小: 207K
代理商: AT-38086
4.8 V NPN Silicon Bipolar
Common Emitter Transistor
Technical Data
Features
4.8 Volt Pulsed
( pulse width = 577
μ
sec,
duty cycle = 12.5%) /CW
Operation
+28 dBm Pulsed P
out
@ 900 MHz, Typ.
+23.5 dBm CW P
out
@ 836.5 MHz, Typ.
60% Pulsed Collector
Efficiency @ 900 MHz, Typ.
11 dB Pulsed Power Gain
@ 900 MHz, Typ.
-35 dBc IMD
3
@ P
out
of
17 dBm per tone, 900 MHz,
Typ.
Applications
Driver Amplifier for GSM
and AMPS/ETACS/ 900 MHz
NMT Cellular Phones
900 MHz ISM and Special
Mobile Radio
AT-38086
Description
Agilent’s AT-38086 is a low cost,
NPN silicon bipolar junction
transistor housed in a surface
mount plastic package. This
device is designed for use as a
pre-driver or driver device in
applications for cellular and
wireless communications
markets. At 4.8 volts, the
AT-38086 features +28 dBm pulsed
output power, Class AB operation,
and +23.5 dBm CW. Superior
efficiency and gain makes the
AT-38086 an excellent choice for
battery powered systems.
The AT-38086 is fabricated with
Agilent’s 10 GHz F
t
Self-Aligned-
Transistor (SAT) process. The die
are nitride passivated for surface
protection. Excellent device
uniformity, performance and
reliability are produced by the use
of ion-implantation, self-alignment
techniques, and gold metalization
in the fabrication of these devices.
85 mil Plastic Surface
Mount Package
Outline 86
Pin Configuration
4
EMITTER
1
BASE
3
COLLECTOR
2
EMITTER
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