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參數資料
| 型號： | AT-33225-TR1 |
| 英文描述： | 4.8 V NPN Common Emitter Output Power Transistor for AMPS, ETACS Phones |
| 中文描述： | 4.8 V叩共發(fā)射極輸出功率晶體管用于AMPS，ETACS電話 |
| 文件頁數： | 1/10頁 |
| 文件大小： | 118K |
| 代理商： | AT-33225-TR1 |
4-71
4.8 V NPN Common Emitter
Output Power Transistor
forAMPS, ETACS Phones
Technical Data
Features
4.8 Volt Operation
+31.0 dBm P
out
@ 900 MHz,
Typ.
70% Collector Efficiency
@900 MHz, Typ.
9 dB Power Gain @ 900 MHz,
Typ.
-29 dBc IMD
3
@ P
out
of
24dBm per tone, 900 MHz,
Typ.
Internal Input Pre-Matching
Facilitates Cascading
50% Smaller than SOT-223
Package
Applications
Output Power Device for
AMPS and ETACS Handsets
900 MHz ISM
AT-33225
Description
Hewlett Packard’s AT-33225 is a
low cost, NPN power silicon
bipolar junction transistor housed
in a miniature MSOP-3 surface
mount plastic package. This
device is designed for use as an
output device for AMPS and
ETACS mobile phones. The
AT-33225 features over 1 watt
CWoutput power when operated
at 4.8 volts. Excellent gain and
superior efficiency make the
AT-33225 ideal for use in battery
powered systems.
The AT-33225 is fabricated with
Hewlett Packard’s 10 GHz F
t
Self-
Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by the
use of ion-implantation, self-
alignment techniques, and gold
metalization in the fabrication of
these devices.
MSOP-3 Surface Mount
Plastic Package
Outline 25
Pin Configuration
EMITTER
1
2
BASE
3
EMITTER
COLLECTOR
4
5965-5910E
相關PDF資料 |
PDF描述 |
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| AT-33225 | Silicon Power Transistors(硅功率型晶體管) |
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| AT-36408-BLK | 4.8 V NPN Common Emitter Output Power Transistor for GSM Class IV Phones |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| AT-332PIN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog Attenuator |
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| AT333S24 | 制造商:POSEICO 制造商全稱:POSEICO 功能描述:PHASE CONTROL THYRISTOR |
| AT336SAT-7IN-TSCREEN | |
| AT337 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog IC |
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