參數(shù)資料
型號(hào): AT-32033-TR1G
元件分類: 小信號(hào)晶體管
英文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: ROHS COMPLIANT, PLASTIC PACKAGE-3
文件頁(yè)數(shù): 4/10頁(yè)
文件大?。?/td> 279K
代理商: AT-32033-TR1G
3
Characterization Information, TA = 25°C
AT-32011
AT-32033
Symbol
Parameters and Test Conditions
Units
Typ.
P1dB
Power at 1 dB Gain Compression (opt tuning)
VCE = 2.7 V, IC = 20 mA
f = 0.9 GHz
dBm
13
G1dB
Gain at 1 dB Gain Compression (opt tuning)
VCE = 2.7 V, IC = 20 mA
f = 0.9 GHz
dB
16.5
15
IP3
Output Third Order Intercept Point (opt tuning)
VCE = 2.7 V, IC = 20 mA
f = 0.9 GHz
dBm
24
|S21|E2
Gain in 50 System
VCE = 2.7 V, IC = 2 mA
f = 0.9 GHz
dB
13
11.5
AT-32011 fig 2
NOISE
FIGURE
(dB)
0
FREQUENCY (GHz)
1
1.5
2
1
0.5
2.5
1.5
2
1 mA
2 mA
5 mA
10 mA
20 mA
AT-32011 fig 3
Ga
(dB)
0
FREQUENCY (GHz)
1.0
1.5
25
10
5
0.5
2.5
15
2.0
20
1 mA
2 mA
5 mA
10 mA
20 mA
AT-32011 fig 4
Ga
(dB)
0
FREQUENCY (GHz)
1.0
1.5
10
5
0.5
2.5
15
2.0
20
1 mA
2 mA
5 mA
10 mA
20 mA
Figure 4. AT-32033 Associated Gain at Optimum Noise
Match vs. Frequency and Current at VCE = 2.7 V.
Figure 2. AT-32011 and AT-32033 Minimum Noise Fig-
ure vs. Frequency and Current at VCE = 2.7 V.
Figure 3. AT-32011 Associated Gain at Optimum Noise
Match vs. Frequency and Current at VCE = 2.7 V.
Figure 6. AT-32011 1 dB Compressed Gain vs. Frequen-
cy and Current at VCE = 2.7V.
Figure 5. AT-32011 and AT-32033 Power at 1 dB Gain
Compression vs. Frequency and Current at VCE = 2.7 V.
Figure 7. AT-32033 1 dB Compressed Gain vs. Frequen-
cy and Current at VCE = 2.7V.
AT-32011 fig 5
P
1dB
(dBm
)
0
-5
FREQUENCY (GHz)
1.0
1.5
20
5
0
0.5
2.5
10
2.0
15
2 mA
5 mA
10 mA
20 mA
AT-32011 fig 6
G
1dB
(dB)
0
FREQUENCY (GHz)
1.0
1.5
20
10
5
0.5
2.5
15
2.0
2 mA
5 mA
10 mA
20 mA
AT-32011 fig 7
G
1dB
(dB)
0
FREQUENCY (GHz)
1.0
1.5
20
10
5
0.5
2.5
15
2.0
2 mA
5 mA
10 mA
20 mA
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