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參數(shù)資料
| 型號： | ASTD-4050-860 |
| 廠商： | Advanced Semiconductor, Inc. |
| 英文描述： | PLANAR TUNNEL (BACK) DIODE |
| 中文描述： | 平面隧道（返回）二極管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 43K |
| 代理商： | ASTD-4050-860 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
1/3
Specifications are subject to change without notice.
ELECTRICAL CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
I
P
ASTD 1020
ASTD 2030
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
100
UNITS
μ
A
200
200
300
ASTD 3040
300
400
ASTD 4050
400
500
ASTD 5060
500
600
V
F
I
F
= 3 mA ASTD 1020
ASTD 2030
135
mV
130
ASTD 3040
125
ASTD 4050
120
ASTD 5060
110
I
R
= 500
μ
A
V
R
400
mV
PLANAR TUNNEL (BACK) DIODE
ASTD SERIES
DESCRIPTION:
The
ASTD
Series of Tunnel Diodes
are Optimized for Operation as Back
Diode Detectors in Applications up
to 18 GHz.
FEATURES INCLUDE:
Excellent Temperature Stability
Fast Rise / Fall Times
Available in Die Form
MAXIMUM RATINGS
I
R
10 mA
P
DISS
3 ERG spike
50 mW @ T
A
= +60
O
C
-65 to +110
O
C
-65 to +125
O
C
P
DISS
T
J
T
STG
PACKAGE STYLE 51
相關PDF資料 |
PDF描述 |
|---|---|
| ASTD-5060-51 | PLANAR TUNNEL (BACK) DIODE |
| ASTD-5060-820 | PLANAR TUNNEL (BACK) DIODE |
| ASTD-5060-860 | PLANAR TUNNEL (BACK) DIODE |
| ASY70 | AB 3C 3#8 SKT RECP |
| AT-118 | Voltage Variable Absorptive Attenuator |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| ASTD-5060-51 | 制造商:ASI 制造商全稱:ASI 功能描述:PLANAR TUNNEL (BACK) DIODE |
| ASTD-5060-820 | 制造商:ASI 制造商全稱:ASI 功能描述:PLANAR TUNNEL (BACK) DIODE |
| ASTD-5060-860 | 制造商:ASI 制造商全稱:ASI 功能描述:PLANAR TUNNEL (BACK) DIODE |
| ASTER5351 | 制造商:Axiohm / Txcom 功能描述: |
| ASTER5520 | 制造商:AXIOHM / TXCOM 功能描述: |
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