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參數(shù)資料
| 型號(hào)： | ASRD830T-TR |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SURFACE MOUNT STEP RECOVERY DIODE |
| 中文描述： | SILICON, STEP RECOVERY DIODE |
| 封裝： | SOT-23, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 74K |
| 代理商： | ASRD830T-TR |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/3
Specifications are subject to change without notice.
STATIC ELECTRICAL CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
TEST CONDITIONS
V
BR
I
R
= 10
μ
A
ASRD 803
ASRD 806
ASRD 808
ASRD 814
ASRD 820
ASRD 830
MINIMUM TYPICAL MAXIMUM
15
20
25
40
50
60
UNITS
V
C
J6
V
R
= 6 V f = 1 MHz ASRD 803
ASRD 806
ASRD 808
ASRD 814
ASRD 820
ASRD 830
0.2
0.4
0.5
1.0
1.5
2.5
0.4
0.8
1.0
1.7
2.5
3.5
pF
SURFACE MOUNT STEP RECOVERY DIODE
ASRD 800 SERIES
DESCRIPTION:
The
ASRD 800
Series of Step
Recovery Diodes are Designed for
Synthesiser and Sampler Applications
Requiring a High Performance to
Cost Ratio.
FEATURES INCLUDE:
Transition Time as Low as
70 pS
Surface Mount
SOD323
Package
MAXIMUM RATINGS
I
F
50 mA
V
R
UP TO RATED
V
BR
P
DISS
100 mW
-55 to +150
O
C
-55 to +150
O
C
1.25
O
C /mW
T
J
T
STG
θ
JC
PACKAGE STYLE SOD- 323
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