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參數(shù)資料
| 型號： | ASIS50-28 |
| 廠商： | Advanced Semiconductor, Inc. |
| 元件分類： | 振蕩器 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | 14引腳DIP封裝，5.0伏，高速CMOS/TTL電平，時鐘振蕩器 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 20K |
| 代理商： | ASIS50-28 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CBO
I
C
= 200 mA
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
65
UNITS
V
BV
CEO
I
C
= 200 mA
35
V
BV
EBO
I
E
= 10 mA
4.0
V
I
CBO
V
CB
= 30 V
2.0
mA
h
FE
V
CE
= 5.0 V I
C
= 500 mA
10
200
---
C
ob
V
CB
= 30 V
f = 1.0 MHz
150
pF
P
out
P
G
h
C
V
CE
= 28 V
P
in
= 1.0 W fo = 30 MHz
50
17
60
18
65
W
dB
%
NPN SILICON RF POWER TRANSISTOR
ASI S50-28
DESCRIPTION:
The
ASI S50-28
is Designed for
Class AB or C, Common Emitter
Linear HF Communications
Applications.
FEATURES INCLUDE:
High Power Gain
Emitter Ballasting
MAXIMUM RATINGS
I
C
9.0 A
V
CB
65 V
P
DISS
117 W @ T
C
= 25
O
C
-55
O
C to +200
O
C
-55
O
C to +200
O
C
1.7
O
C/W
T
J
T
STG
q
JC
PACKAGE STYLE .500" 4L FLG
1 = COLLECTOR 2 = BASE
3 & 4 = EMITTER
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ASISD1006 | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| ASISD1425 | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| ASISD1441 | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| ASISD1530-7 | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| ASISD1905 | HF/VHF POWER MOSFET N-Channel Enhancement Mode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ASISD1006 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON HIGH FREQUENCY TRANSISTOR |
| ASISD1425 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| ASISD1441 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| ASISD1530-7 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| ASISD1905 | 制造商:ASI 制造商全稱:ASI 功能描述:HF/VHF POWER MOSFET N-Channel Enhancement Mode |
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