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參數(shù)資料
| 型號(hào)： | ASIBLV30 |
| 廠商： | Advanced Semiconductor, Inc. |
| 元件分類： | 振蕩器 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | 14引腳DIP封裝，5.0伏，高速CMOS/TTL電平，時(shí)鐘振蕩器 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 13K |
| 代理商： | ASIBLV30 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CBO
I
C
= 10 mA
BV
CEO
I
C
= 50 mA
BV
EBO
I
E
= 4.0 mA
I
CBO
V
CB
= 30 V
h
FE
V
CE
= 25 V I
C
= 500 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
60
UNITS
V
V
V
mA
---
30
4.0
4.0
15
120
C
OB
V
CB
= 28 V
f = 1.0 MHz
10
pF
P
G
IMD
1
V
CE
= 25 V
P
OUT
= 2.0 W
I
C
= 410 mA f = 860 MHz
10
-60
dB
dBc
NPN SILICON RF POWER TRANSISTOR
BLV30
DESCRIPTION:
The
ASI BLV30
is Designed for
Television Band IV & V Applications
up to 860 MHz.
FEATURES:
Common Emitter
P
G
= 10 dB at 2.0 W/860 MHz
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
1.5 A
V
CBO
60 V
V
CEO
30 V
V
EBO
4.0 V
P
DISS
15.9 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
-65
O
C to +150
O
C
10
O
C/W
T
J
T
STG
θ
JC
PACKAGE STYLE .280 4L STUD
MINIMUM
inches / mm
.003 / 0.08
.270 / 6.86
.117 / 2.97
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.285 / 7.24
.137 / 3.48
.007 / 0.18
H
.245 / 6.22
.255 / 6.48
DIM
1.010 / 25.65
1.055 / 26.80
I
J
.217 / 5.51
.220 / 5.59
K
.175 / 4.45
.285 / 7.24
.275 / 6.99
.572 / 14.53
.640 / 16.26
.130 / 3.30
.230 /5.84
G
K
H
F
E
D
C
B
45°
A
#8-32 UNC
I
J
S
S
D
G
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