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參數(shù)資料
| 型號(hào)： | ASI30217 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | MICROSTRIP/STRIPLINE PIN DIODE SWITCH |
| 中文描述： | 150 V, SILICON, PIN DIODE |
| 封裝： | HERMETIC SEALED, METAL, M-50, 2 PIN |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 17K |
| 代理商： | ASI30217 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1202
FAX (818) 765-3004
1/1
Specifications are subject to change without
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
V
BR
I
R
= 10
μ
A
V
F
I
F
= 100 mA
τ
I
F
= 50 mA I
R
= 250 mA
NONE
TEST CONDITIONS
MINIMUM
150
TYPICAL
MAXIMUM
UNITS
V
1.0
V
400
μ
S
I
L
I
L
I
F
= 0 mA P
IN
= 0 dBm f = 10 GHz
I
F
= 100 mA P
IN
= 0 dBm f = 10 GHz
I
F
= 0 mA P
IN
= 0 dBm f = 10 GHz
0.5
dB
20
dB
V
SWR
1.5:1
---
MICROSTRIP/STRIPLINE PIN DIODE SWITCH
5082-3170
DESCRIPTION:
The
ASI 5082-3170
is a Silicon PIN
Diode Module Designed for Reflective
Attenuator and Switching Applications
from 1 to 18 GHz.
FEATURES INCLUDE:
Direct Replacement for
HP 5082-3170
Isolation = 20 dB min. at 10 GHz
Hermetic Package
MAXIMUM RATINGS
I
F
250 mA
V
R
P
DISS
150 V
1.75 W @ T
C
= 25 °C
T
J
-65 °C to +150 °C
T
STG
-65 °C to +150 °C
θ
JC
72
°C/W
PACKAGE STYLE M-50
ORDER CODE:
ASI30217
Cathode
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ASI30264 | BATCH MATCHED BEAM LEAD SCHOTTKY DIODE |
| ASI30285 | SCHOTTKY BARRIER MIXER DIODE |
| ASI30291 | SILICON HYPERABRUPT VARACTOR DIODE |
| ASIDKV6520-12 | SILICON HYPERABRUPT VARACTOR DIODE |
| ASI30300 | SILICON HYPERABRUPT VARACTOR DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ASI30264 | 制造商:ASI 制造商全稱(chēng):ASI 功能描述:BATCH MATCHED BEAM LEAD SCHOTTKY DIODE |
| ASI30285 | 制造商:ASI 制造商全稱(chēng):ASI 功能描述:SCHOTTKY BARRIER MIXER DIODE |
| ASI30291 | 制造商:ASI 制造商全稱(chēng):ASI 功能描述:SILICON HYPERABRUPT VARACTOR DIODE |
| ASI30300 | 制造商:ASI 制造商全稱(chēng):ASI 功能描述:SILICON HYPERABRUPT VARACTOR DIODE |
| ASI30304 | 制造商:ASI 制造商全稱(chēng):ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
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