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參數(shù)資料
| 型號(hào)： | ASI10666 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | Si, RF POWER, FET |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 19K |
| 代理商： | ASI10666 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
V
DSS
I
DS
= 10 mA
I
DSS
V
DS
= 28 V
I
GSS
V
GS
= 20 V
V
GS
V
DS
= 10 V I
D
= 25 mA
G
FS
V
DS
= 10 V I
D
= 500 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
60
UNITS
V
mA
μ
A
V
mMho
4.0
1.0
1.0
500
6.0
C
ISS
C
OSS
C
RSS
V
DS
= 28 V
V
GS
= 0 V f = 1.0 MHz
46
33
6.0
pF
P
G
η
D
V
DD
= 28 V I
DQ
= 25 mA P
OUT
= 25 W
f = 400 MHz
7.0
60
dB
%
NPN SILICON RF POWER TRANSISTOR
UFT30-28
DESCRIPTION:
The
UFT30-28
is Designed for Class
A and B Power Ampliifiers Operating
up to 500 MHz.
FEATURES:
P
G
=
7.0 dB min. at 25 W/400 MHz
η
D
= 60 % Typical
Omnigold
Metalization System
MAXIMUM RATINGS
I
D
5.0 A
V
DDS
65 V
V
GS
±
40 V
P
DISS
100 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
T
J
T
STG
-65
O
C to +150
O
C
θ
JC
1.8
O
C/W
PACKAGE STYLE .380 4L FLG.
ORDER CODE: ASI10666
MINIMUM
inches / mm
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.385 / 9.78
.980 / 24.89
H
.160 / 4.06
.180 / 4.57
.280 / 7.11
DIM
.220 / 5.59
.230 / 5.84
.105 / 2.67
.085 / 2.16
I
J
.240 / 6.10
.255 / 6.48
.785 / 19.94
F
B
G
.125
.125 NOM.
FULL R
D
E
C
H
.112 x 45°
A
I
J
.004 / 0.10
.006 / 0.15
.720 / 18.29
.730 / 18.54
D
S
S
G
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