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參數(shù)資料
| 型號： | ASI10610 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; Number of Contacts:23; Connector Shell Size:16; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight |
| 中文描述： | HF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 0.500 INCH, FM-4 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 18K |
| 代理商： | ASI10610 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CES
I
C
= 100 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
110
UNITS
V
BV
CE0
I
C
= 200 mA
55
V
BV
EBO
I
E
= 10 mA
4.0
V
h
FE
V
CE
= 6.0 V I
C
= 1.4 A
19
---
50
---
C
ob
V
CB
= 50 V
f = 1.0 MHz
100
pF
G
P
IMD
3
h
C
V
CE
= 50 V
P
OUT
= 75 W
(PEP)
14
---
37
---
-30
dB
dBc
%
NPN SILICON RF POWER TRANSISTOR
HF75-50F
DESCRIPTION:
The
ASI HF75-50F
is Designed for
FEATURES:
P
G
= 14 dB min. at 75 W/30 MHz
IMD
3
= 50 dBc max. at 75 W
(PEP)
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
q
JC
3.25 A
110 V
55 V
4.0 V
127 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
-65
O
C to +150
O
C
2.0
O
C/W
PACKAGE STYLE .380 4L FLG
ORDER CODE: ASI10610
MINIMUM
inches / mm
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.385 / 9.78
.980 / 24.89
H
I
.160 / 4.06
.180 / 4.57
.280 / 7.11
DIM
.220 / 5.59
.230 / 5.84
.105 / 2.67
.085 / 2.16
J
.240 / 6.10
.255 / 6.48
.785 / 19.94
.720 / 18.29
F
B
G
.125
.125 NOM.
FULL R
D
E
C
H
.112 x 45°
A
I
J
.004 / 0.10
.006 / 0.15
.730 / 18.54
E
B
C
E
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