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參數(shù)資料
| 型號(hào)： | ASI10517 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 17K |
| 代理商： | ASI10517 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CBO
I
C
= 3.0 mA
BV
CEO
I
C
= 3.0 mA
BV
EBO
I
E
= 3.0 mA
h
FE
V
CE
= 5.0 V I
C
= 600 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
45
12
3.5
15
UNITS
V
V
V
---
150
C
OB
V
CB
= 28 V f = 1.0 MHz
7.0
pF
P
G
η
C
V
CC
= 28 V
P
OUT
= 10 W f = 1.65 GHz
11
45
dB
%
NPN SILICON RF POWER TRANSISTOR
ASAT10
DESCRIPTION:
The
ASI ASAT10
is Designed for
FEATURES:
Input Matching Network
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
2.3 A
V
CBO
45 V
V
CEO
15 V
V
EBO
3.5 V
P
DISS
29 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
T
J
T
STG
-65
O
C to +150
O
C
θ
JC
6.0
O
C/W
PACKAGE STYLE .250 2L FLG(A)
ORDER CODE: ASI10517
MINIMUM
inches / mm
.055 / 1.40
.635 / 16.13
.555 / 14.10
.124 / 3.15
.243 / 6.17
.739 / 18.77
.315 / 8.00
B
C
D
E
F
G
H
I
J
A
MAXIMUM
inches / mm
.253 / 6.43
.665 / 16.89
.565 / 14.35
.749 / 19.02
.325 / 8.26
.065 / 1.65
.002 / 0.05
.055 / 1.40
.075 / 1.91
.006 / 0.15
.065 / 1.65
.095 / 2.41
.190 / 4.83
DIM
K
L
M
.245 / 6.22
.255 / 6.48
K
J
I
L
M
B
.050 x 45°
.130 NOM.
H
G
F
E
C
D
.020 x 45°
A
.092 / 2.34
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