參數(shù)資料
型號: ASI10516
廠商: ADVANCED SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator
中文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
封裝: FLG(A), 2 PIN
文件頁數(shù): 1/1頁
文件大?。?/td> 17K
代理商: ASI10516
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CBO
I
C
= 50 mA
BV
CES
I
C
= 50 mA
BV
EBO
I
E
= 15 mA
I
CES
V
CE
= 50 V
h
FE
V
CE
= 5.0 V I
C
= 5.0 A
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
65
65
3.0
10
UNITS
V
V
V
mA
---
30
---
P
G
η
C
V
CC
= 45 V P
OUT
= 325 W f = 1.2 to 1.4
GHz
6.5
38
dB
%
NPN SILICON RF POWER TRANSISTOR
ALR325
DESCRIPTION:
The
ASI ALR325
is Designed for
FEATURES:
Input Matching Network
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
18.75 A
V
CC
55 V
P
DISS
730 W @ T
C
= 25
O
C
-65
O
C to +250
O
C
T
J
T
STG
-65
O
C to +200
O
C
θ
JC
0.10
O
C/W
PACKAGE STYLE .400 2L FLG(A)
ORDER CODE: ASI10516
MINIMUM
inches / mm
.100 / 2.54
.376 / 9.55
.050 / 1.27
.110 / 2.79
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.120 / 3.05
.130 / 3.30
.396 / 10.06
.193 / 4.90
H
DIM
K
L
I
J
.490 / 12.45
.690 / 17.53
.003 / 0.08
.510 / 12.95
.710 / 18.03
.006 / 0.18
N
M
.118 / 3.00
.131 / 3.33
.135 / 3.43
.145 / 3.68
.072 / 1.83
.052 / 1.32
P
.230 / 5.84
G
C
N
2xR
4x .062 x 45°
I
E
P
M
F
L
H
J
K
2xB
D
.040 x 45°
A
.100 / 2.54
.395 / 10.03
.407 / 10.34
.890 / 22.61
.910 / 23.11
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