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參數(shù)資料
| 型號(hào)： | AS7C3256AA |
| 廠商： | Alliance Semiconductor Corporation |
| 英文描述： | 3.3V 32K X 8 CMOS SRAM (Common I/O) |
| 中文描述： | 3.3 32K的× 8 CMOS SRAM的（通用的I / O） |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大?。?/td> | 238K |
| 代理商： | AS7C3256AA |
AS7C3256A
4/23/04; v.2.0
Alliance Semiconductor
P. 3 of 9
Recommended operating conditions
Parameter
* V
IL
min = –1.0V for pulse width less than 5ns.
** V
IH
max = V
CC
+ 2.0V for pulse width less than 5ns.
DC operating characteristics (over the operating range)
1
Capacitance (f = 1MHz, T
a
= room temperature, V
CC
= NOMINAL)
2
Parameter
Symbol
Min
Typical
Max
Unit
Supply voltage
V
CC
V
IH**
V
IL*
T
A
T
A
3.0
2.0
3.3
–
3.6
V
V
Input voltage
V
CC
+0.5
0.8
-0.5
–
V
o
C
o
C
Ambient operating temperature
commercial
industrial
0
–
–
70
85
–40
Parameter
Sym
Test conditions
-10
-12
-15
-20
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Input leakage
current
Output leakage
current
|
I
LI
|
V
CC
= Max,
V
in
= GND to V
CC
|
I
LO
|
V
CC
= Max,
V
OUT
= GND to V
CC
–
1
–
1
–
1
–
1
μA
–
1
–
1
–
1
–
1
μA
Operating
power supply
current
I
CC
V
CC
= Max, CE
≤
V
IL
f = f
Max
, I
OUT
= 0mA
–
50
–
45
–
40
–
35
mA
Standby power
supply current
I
SB
V
CC
= Max, CE
>
V
IH
f = f
Max
V
CC
= Max, CE
>
V
CC
–0.2V
V
IN
< 0.2V or
V
IN
> V
CC
–0.2V, f = 0
V
OL
I
OL
= 8 mA, V
CC
= Min
V
OH
I
OH
= –4 mA, V
CC
= Min
–
20
–
20
–
20
–
20
mA
I
SB1
–
2.0
–
2.0
–
2.0
–
2.0
mA
Output voltage
–
0.4
–
0.4
–
0.4
–
0.4
V
2.4
–
2.4
–
2.4
–
2.4
–
V
Symbol
Signals
Test conditions
Max
Unit
Input capacitance
I/O capacitance
C
IN
C
I/O
A,
CE
,
WE
,
OE
I/O
V
in
= 0V
V
in
= V
out
= 0V
5
7
pF
pF
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