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參數(shù)資料
| 型號： | AS5LC512K8EC-12L/XT |
| 廠商： | AUSTIN SEMICONDUCTOR INC |
| 元件分類： | SRAM |
| 英文描述： | 512K x 8 SRAM 3.3 VOLT HIGH SPEED SRAM with CENTER POWER PINOUT |
| 中文描述： | 512K X 8 STANDARD SRAM, 12 ns, CDSO36 |
| 封裝： | CERAMIC, LCC-36 |
| 文件頁數(shù)： | 8/12頁 |
| 文件大小： | 359K |
| 代理商： | AS5LC512K8EC-12L/XT |
SRAM
AS5LC512K8
AS5LC512K8
Rev. 1.1 6/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
5
Austin Semiconductor, Inc.
Input pulse levels ...................................................... Vss to 3.0V
Input rise and fall times ......................................................... 3ns
Input timing reference levels ............................................... 1.5V
Output reference levels ........................................................ 1.5V
Output load ................................................. See Figures 1 and 2
NOTES
1.
All voltages referenced to V
SS (GND).
2.
I
CC limit shown is for absolute worst case switching of
ADDR, ADDR\, ADDR, etc.
3.
I
CC is dependent on output loading and cycle rates.
4.
This parameter is guaranteed but not tested.
5.
Test conditions as specified with the output loading
as shown in Fig. 1 unless otherwise noted.
6.
tLZCE, tLZWE, tLZOE, tHZCE, tHZOE and tHZWE
are specified with CL = 5pF as in Fig. 2. Transition is
measured ±200mV from steady state voltage.
7.
At any given temperature and voltage condition,
tHZCE is less than tLZCE, and tHZWE is less than
tLZWE.
8.
WE\ is HIGH for READ cycle.
9.
Device is continuously selected. Chip enables and
output enables are held in their active state.
10. Address valid prior to, or coincident with, latest
occurring chip enable.
11. tRC = Read Cycle Time.
12. Chip enable and write enable can initiate and
terminate a WRITE cycle.
13. Output enable (OE\) is inactive (HIGH).
14. Output enable (OE\) is active (LOW).
15. ASI does not warrant functionality nor reliability of
any product in which the junction temperature
exceeds 150°C. Care should be taken to limit power to
acceptable levels.
Fig. 1 Output Load Equivalent
Fig. 2 Output Load Equivalent
DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only)
AC TEST CONDITIONS
DESCRIPTION
SYM
MIN
MAX
UNITS
NOTES
Vcc for Retention Data
VDR
2V
Data Retention Current
Vcc = 2.0V
ICCDR
6.5
mA
Chip Deselect to Data
tCDR
0ns
4
Operation Recovery Time
tR
20
ms
4, 11
CONDITIONS
CE\ > VCC -0.2V
VIN > VCC -0.2 or 0.2V
3.3V
Q
353
5 pF
319
Q
30 pF
R
L
= 50
V
L
= 1.5V
Z
O=50
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| AS5LC512K8EC-15L/883C | 512K x 8 SRAM 3.3 VOLT HIGH SPEED SRAM with CENTER POWER PINOUT |
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| AS5LC512K8EC-15/883C | 制造商:Micross Components, Inc. 功能描述:SRAM, 4MB - Trays |
| AS5LC512K8EC-15L/883C | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:512K x 8 SRAM 3.3 VOLT HIGH SPEED SRAM with CENTER POWER PINOUT |
| AS5LC512K8EC-15L/IT | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:512K x 8 SRAM 3.3 VOLT HIGH SPEED SRAM with CENTER POWER PINOUT |
| AS5LC512K8EC-15L/XT | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:512K x 8 SRAM 3.3 VOLT HIGH SPEED SRAM with CENTER POWER PINOUT |
| AS5LC512K8EC-20/883C | 制造商:Micross Components, Inc. 功能描述:SRAM, 4MB - Trays |
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