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參數資料
| 型號： | AS29F200B-120TI |
| 廠商： | ALLIANCE SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 5V 256K x 8/128K x 8 CMOS FLASH EEPROM |
| 中文描述： | 128K X 16 FLASH 5V PROM, 120 ns, PDSO48 |
| 封裝： | 12 X 20 MM, TSOP-48 |
| 文件頁數： | 1/20頁 |
| 文件大小： | 375K |
| 代理商： | AS29F200B-120TI |
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Organization: 256K×8 or 128K×16
Sector architecture
- One 16K; two 8K; one 32K; and three 64K byte sectors
- Boot code sector architecture—T (top) or B (bottom)
- Erase any combination of sectors or full chip
Single 5.0±0.5V power supply for read/write operations
Sector protection
High speed 55/70/90/120 ns address access time
Automated on-chip programming algorithm
- Automatically programs/verifies data at specified ad-
dress
Automated on-chip erase algorith
- Automatically preprograms/erases chip or specified sec-
tors
10,000 write/erase cycle endurance
Hardware RESET pin
- Resets internal state machine to read mode
Low power consumption
- 20 mA typical read current
- 30 mA typical program current
- 300 μA typical standby current
- 1 μA typical standby current (RESET = 0)
JEDEC standard software, packages and pinouts
- 48-pin TSOP
- 44-pin SO
Detection of program/erase cycle completion
- DQ7 DATA polling
- DQ6 toggle bit
- RY/BY output
Erase suspend/resume
- Supports reading data from a sector not being erased
Low V
CC
write lock-out below 2.8V
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X decoder
V
CC
V
SS
Cell matrix
Y decoder
Y gating
Data latch
Chip enable
Output enable
Logic
A
Input/output
buffers
Sector protect
switches
Command
register
Program/erase
control
V
CC
detector
Erase voltage
generator
Program voltage
generator
Timer
A0–A16
CE
OE
STB
STB
RY/BY
WE
BYTE
RESET
DQ0–DQ15
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5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A14
A15
A16
BYTE
V
SS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
V
CC
A6
A5
A4
A3
A2
A1
A0
CE
V
SS
OE
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
DQ3
DQ11
44-pin SO
A10
A11
A12
A13
2
3
4
RY/BY
NC
A7
1
NC
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
43
42
41
44
WE
A8
A9
RESET
A
A
A
A
A
A
A
A
A
B
V
S
D
D
D
N
N
W
R
N
N
R
N
D
D
D
D
V
C
D
D
D
D
D
1
2
3
4
5
6
7
8
9
1
1
1
1
1
4
4
4
4
4
4
4
4
4
3
3
3
3
3
1
1
3
3
48-pin TSOP
N
A
A
A
A
A
A
A
A
C
V
S
O
D
D
D
D
1
1
1
2
2
2
3
3
3
2
2
2
2
2
2
2
AS29F200
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29F200-55
55
55
25
29F200-70
70
70
30
29F200-90
90
90
35
29F200-120 Unit
120
120
50
Maximum access time
Maximum chip enable access time
Maximum output enable access time
t
AA
t
CE
t
OE
ns
ns
ns
相關PDF資料 |
PDF描述 |
|---|---|
| AS29F200B-55SC | 5V 256K x 8/128K x 8 CMOS FLASH EEPROM |
| AS29F200B-55SI | 5V 256K x 8/128K x 8 CMOS FLASH EEPROM |
| AS29F200B-55TC | 5V 256K x 8/128K x 8 CMOS FLASH EEPROM |
| AS29F200B-55TI | 5V 256K x 8/128K x 8 CMOS FLASH EEPROM |
| AS29F200B-70SC | 5V 256K x 8/128K x 8 CMOS FLASH EEPROM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AS29F200B-55SC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 256K x 8/128K x 8 CMOS FLASH EEPROM |
| AS29F200B-55SI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 256K x 8/128K x 8 CMOS FLASH EEPROM |
| AS29F200B-55TC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 256K x 8/128K x 8 CMOS FLASH EEPROM |
| AS29F200B-55TI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 256K x 8/128K x 8 CMOS FLASH EEPROM |
| AS29F200B-70SC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 256K x 8/128K x 8 CMOS FLASH EEPROM |
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