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參數(shù)資料
| 型號： | ARF465B |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 64K |
| 代理商： | ARF465B |
050-4921
Rev
A
7-2003
MAXIMUM RATINGS
All Ratings: T
C
= 25°C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
V
DS
(ON)
I
DSS
I
GSS
g
fs
V
GS
(TH)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250 A)
On State Drain Voltage 1 (I
D
(ON) = 3A, V
GS
= 10V)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Forward Transconductance (V
DS
= 25V, I
D
= 3A)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 50mA)
MIN
TYP
MAX
1200
7
25
250
±100
34
35
UNIT
Volts
A
nA
mhos
Volts
Symbol
V
DSS
V
DGO
I
D
V
GS
P
D
RθJC
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ T
C
= 25°C
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25°C
Junction to Case
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
ARF465A/B
1200
6
±30
250
0.50
-55 to 150
300
UNIT
Volts
Amps
Volts
Watts
°C/W
°C
RF POWER MOSFETs
N - CHANNEL ENHANCEMENT MODE
300V
150W
60MHz
The ARF465A and 465B comprise a symmetric pair of common source RF power transistors designed for push-pull
scientific, commercial, medical and industrial RF power amplifier applications up to 60 MHz.
Specified 300 Volt, 40.68 MHz Characteristics:
Output Power = 150 Watts.
Gain = 13dB (Class C)
Efficiency = 75%
Low Cost Common Source RF Package.
Low Vth thermal coefficient.
Low Thermal Resistance.
Optimized SOA for Superior Ruggedness.
TO-247
ARF465A
ARF465B
G
D
S
Common
Source
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
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| ASI10498 | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| ASI10579 | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| AT-00511-TR1 | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| ARF465BG | 制造商:Microsemi Corporation 功能描述:Trans RF MOSFET N-CH 1200V 6A 3-Pin(3+Tab) TO-247 制造商:Microsemi Corporation 功能描述:RF MOSFET (VDMOS) - Bulk 制造商:Microsemi Corporation 功能描述:Microsemi ARF465BG Discrete Misc 制造商:Microsemi Corporation 功能描述:RF PWR MOSFET 1200V 6A TO-247 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR MOSFET |
| ARF466A | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFETs |
| ARF466AG | 制造商:Microsemi Corporation 功能描述:RF MOSFET (VDMOS) - Bulk 制造商:Microsemi Corporation 功能描述:RF FET N CH 1000V 13A TO264 制造商:Microsemi Corporation 功能描述:N-channel 357 W 1000 V RF MOSFET (VDMOS) 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR MOSFET |
| ARF466B | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFETs |
| ARF466BG | 制造商:Microsemi Corporation 功能描述:RF MOSFET (VDMOS) - Bulk 制造商:Microsemi Corporation 功能描述:RF FET N CH 1000V 13A TO264 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR MOSFET |
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