- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄366583 > ARF464A (Advanced Power Technology Ltd.) RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE PDF資料下載
參數(shù)資料
| 型號(hào)： | ARF464A |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE |
| 中文描述： | 射頻功率MOSFET N溝道增強(qiáng)模式 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 102K |
| 代理商： | ARF464A |
0
30
45
60
75
90
105
120
FREQUENCY (MHz)
Figure 1, Typical Gain vs Frequency
NOT UPDATED
Class C
V
DD
= 150V
out
= 150W
30
25
20
15
10
5
0
G
PRELIMINARY
DYNAMIC CHARACTERISTICS
ARF464A/B
Symbol
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
GS
= 0V
V
DS
= 150V
f = 1 MHz
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25°C
R
G
= 1.6
W
MIN
TYP
MAX
775
1000
340
480
150
230
6
12
9
18
13
20
3.4
10
UNIT
pF
ns
FUNCTIONAL CHARACTERISTICS
Symbol
G
PS
h
y
Test Conditions
f = 81.36 MHz
V
GS
= 0V V
DD
= 65V
P
out
= 100W
No Degradation in Output Power
Characteristic
Common Source Amplifier Power Gain
Drain Efficiency
Electrical Ruggedness VSWR 10:1
MIN
TYP
MAX
13
15
70
75
UNIT
dB
%
1
Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
1
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Typical Maximum Safe Operating Area
5
10
50
100 200
8
6
4
2
02
4
6
8
10
C
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
3000
1000
500
100
50
10.1
.5
1
5
10
50
150
I
D
,
V
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
I
D
,
VD250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = -55°C
TJ = -55°C
TJ = +125°C
TJ = +25°C
TC =+25°C
TJ =+150°C
SINGLE PULSE
OPERATION HERE
LIMITED BY R
DS
(ON)
Ciss
Coss
Crss
60
10
5
1
1mS
10mS
100mS
DC
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ARF464B | RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE |
| ARF526 | FAST RECOVERY DIODE |
| ARF526S16 | FAST RECOVERY DIODE |
| ARF565S32 | FAST RECOVERY DIODE |
| ARF565 | FAST RECOVERY DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ARF464B | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE |
| ARF465A | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFETs |
| ARF465AG | 制造商:Microsemi Corporation 功能描述:RF MOSFET (VDMOS) - Bulk 制造商:Microsemi Corporation 功能描述:Microsemi ARF465AG Discrete Misc 制造商:Microsemi Corporation 功能描述:RF PWR MOSFET 1200V 6A TO-247 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR MOSFET |
| ARF465B | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFETs |
| ARF465BG | 制造商:Microsemi Corporation 功能描述:Trans RF MOSFET N-CH 1200V 6A 3-Pin(3+Tab) TO-247 制造商:Microsemi Corporation 功能描述:RF MOSFET (VDMOS) - Bulk 制造商:Microsemi Corporation 功能描述:Microsemi ARF465BG Discrete Misc 制造商:Microsemi Corporation 功能描述:RF PWR MOSFET 1200V 6A TO-247 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR MOSFET |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。