參數(shù)資料
型號： ARF461A
廠商： Advanced Power Technology Ltd.
英文描述： N-CHANNEL ENHANCEMENT MODE
中文描述： N溝道增強模式
文件頁數(shù)： 2/4頁
文件大?。?/td> 97K
代理商： ARF461A
0
30
45
60
75
90
105
120
FREQUENCY (MHz)
Figure 1, Typical Gain vs Frequency
Class C
V
DD
= 150V
out
= 150W
30
25
20
15
10
5
0
G
PRELIMINARY
DYNAMIC CHARACTERISTICS
ARF461A/B
Symbol
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
GS
= 0V
V
DS
= 50V
f = 1 MHz
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25°C
R
G
= 1.6
W
MIN
TYP
MAX
1700
175
50
8
5
21
10.1
UNIT
pF
ns
FUNCTIONAL CHARACTERISTICS
Symbol
G
PS
h
y
Test Conditions
f = 40.68 MHz
V
GS
= 0V V
DD
= 250V
P
out
= 150W
No Degradation in Output Power
Characteristic
Common Source Amplifier Power Gain
Drain Efficiency
Electrical Ruggedness VSWR 10:1
MIN
TYP
MAX
13
15
70
75
UNIT
dB
%
1
Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
1
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Typical Maximum Safe Operating Area
10
100
1000
8
6
4
2
00
2
4
6
8
C
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
5000
1000
500
100
50
10.1
.5
1
5
10
50
200
I
D
,
V
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
I
D
,
VD250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = -55°C
TJ = -55°C
TJ = +125°C
TJ = +25°C
TC =+25°C
TJ =+150°C
SINGLE PULSE
OPERATION HERE
LIMITED BY R
DS
(ON)
Ciss
Coss
Crss
26
10
5
1
.5
.1
1mS
10mS
100mS
DC
100uS
相關(guān)PDF資料
PDF描述
ARF462A N-CHANNEL ENHANCEMENT MODE
ARF462B N-CHANNEL ENHANCEMENT MODE
ARF462 FAST RECOVERY DIODE
ARF462S45 FAST RECOVERY DIODE
ARF463A N-CHANNEL ENHANCEMENT MODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ARF461AG 制造商:Microsemi Corporation 功能描述:RF MOSFET (VDMOS) - Bulk 制造商:Microsemi Corporation 功能描述:RF PWR MOSFET 1000V TO-247 制造商:Microsemi Corporation 功能描述:ARF461A Series N-Channel 150 W 65 MHz Flange Mount RF Power Mosfet - TO-247-3 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR MOSFET
ARF461B 制造商:Microsemi Corporation 功能描述:ARF461B Series N-Channel 150 W 65 MHz Flange Mount RF Power Mosfet - TO-247-3 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR MOSFET
ARF461BG 制造商:Microsemi Corporation 功能描述:RF MOSFET (VDMOS) - Bulk 制造商:Microsemi Corporation 功能描述:RF PWR MOSFET 1000V TO-247 制造商:Microsemi Corporation 功能描述:ARF461B Series N-Channel 150 W 65 MHz Flange Mount RF Power Mosfet - TO-247-3 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR MOSFET
ARF461CG 功能描述:RF MOSFET N-CH 1000V TO247 制造商:microsemi corporation 系列:- 包裝:散裝 零件狀態(tài):停產(chǎn) 晶體管類型:N 通道 頻率:65MHz 增益:15dB 電壓 - 測試:50V 額定電流:25μA 噪聲系數(shù):- 功率 - 輸出:150W 電壓 - 額定:1000V 封裝/外殼:TO-247-3 供應商器件封裝:TO-247 標準包裝:30
ARF462 制造商:POSEICO 制造商全稱:POSEICO 功能描述:FAST RECOVERY DIODE
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