參數(shù)資料
型號： ARF450
廠商： Advanced Power Technology Ltd.
英文描述： N-CHANNEL ENHANCEMENT MODE
中文描述： N溝道增強(qiáng)模式
文件頁數(shù)： 4/4頁
文件大?。?/td> 178K
代理商： ARF450
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J1
T1
R1
6.8K
J2
80 V
-
+
+
-
+
R4
10K
L3
C1
1
C3
.47
C2
10n
C4
.1
C5
1n
C6
50p
T2
DUT
R8
20
10W
Bias 0-6V
T1 9:1 RF Transformer on type 43 beads
T2 4:1 RF Transformer. Made from two pieces
of 25 ohm semi-rigid coax with type 43
ferrite bead loading.
J1
T1
J2
150V
+
-
L5
DUT
R1
100
R2
100
L1
L2
L3
L4
T2
C1
C2
C3
C4
C6
C7
C5
TL1
TL2
C1 75-380 pF ARCO 465
C2 25-115 pF ARCO 462
C3 -C5 2 nF NPO 500V chip
C6 10 nF 500V chip
C7 .47 uF Ceramic 500V
L1-L2 50 nH 3t # 14 ga .3" dia
L3-L4 .68 uH 12t #24 enam
L5 2t #20 on bead approx 2 uH
R1-R2 100 ohm 1 W
T1 9:1 RF transformer
T2 1:1 coax balun
TL1-TL2 Printed line 1" long
ARF450
BeO
11405
1
8
yyyy
yy
pound must be used to reduce the effects of small surface irregulari-
ties. The heatsink should incorporate a copper heat spreader to
obtain best results.
The package is designed to be clamped to a heatsink. A clamp-
ed joint maintains the required mounting pressure while allowing for
thermal expansion of both the device and the heat sink. An L-clamp,
a compliant layer of plastic or rubber, and a 6-32 (M3.5) screw can
provide the minimum 35 lb required mounting force. T = 4 in-lb.
Heat Sink
ARF 450
Compliant
layer
Clamp
ARF450
BeO
11405
.582
.176
.875
dims: inches
1
6
5,8
7
2
1,4
3
8
.125
.125
.210
.210
.060 typ.
.375
.062
.005
.375
HAZARDOUS MATERIAL
WARNING
The ceramic portion of the
device between leads and
mounting surface is beryllium
oxide. Beryllium oxide dust is
highly toxic when inhaled. Care
must be taken during handling
and mounting to avoid damage
to this area. These devices
must never be thrown away with
general industrial or domestic
waste.
Typical Mounting
Thermal Considerations and Package Mounting:
The rated 650W power dissipation is only available when the pack-
age mounting surface is at 25C and the junction temperature is 200C.
The thermal resistance between junctions and case mounting surface
is 0.27 C/W. When installed, an additional thermal impedance of 0.05
C/W between the package base and the mounting surface is typical.
Insure that the mounting surface is smooth and flat. Thermal joint com-
相關(guān)PDF資料
PDF描述
ARF461B N-CHANNEL ENHANCEMENT MODE
ARF461A N-CHANNEL ENHANCEMENT MODE
ARF462A N-CHANNEL ENHANCEMENT MODE
ARF462B N-CHANNEL ENHANCEMENT MODE
ARF462 FAST RECOVERY DIODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ARF460A 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
ARF460AG 功能描述:FET RF N-CH 500V 14A TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
ARF460B 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
ARF460BG 功能描述:FET RF N-CH 500V 14A TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
ARF461 制造商:International Rectifier 功能描述:CONV DC-DC SNGL OUT -50 TO 50VIN - Bulk
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