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參數(shù)資料
| 型號： | ARF443 |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET |
| 中文描述： | N溝道增強型射頻功率MOSFET |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 55K |
| 代理商： | ARF443 |
RF POWER IN (WATTS)
Figure 1, RF Power Out vs RF Power In
Figure 2, RF Power Out vs RF Power In
V
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Transfer Characteristics
T
, CASE TEMPERATURE (
°
C)
Figure 3, Threshold Voltage vs Temperature
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Maximum DC Safe Operating Area
T
, JUNCTION TEMPERATURE (
°
C)
Figure 5, Breakdown Voltage vs Temperature
V
, DRAIN-.5
Figure 6, Typical Capacitance vs. Drain-To-Source Voltage
C
I
D
,
I
D
,
R
B
D
(
V
G
(
V
(
ARF442/443
250
μ
SVDS = 30V
@ <0.5 % DUTY CYCLE
TC =+25
°
C
TJ =+150
°
C
V
DS
= V
GS
1.2
1.1
1.0
0.9
0.8
0.7
1.2
1.1
1.0
0.9
0.8
0.7
TJ = +25
°
C
TJ = +125
°
C
TJ = +25
°
C
TJ = -55
°
C
6
TJ = +125
°
C
TJ = -55
°
C
Performance of aTypical
Push-Pull Power Amplifier (2-Devices)
f = 13.56 MHz
V
DD
= 100V
OpeaionHee
LmtedByR
DS
(ON
Ciss
0
1
2
3
4
5
6
7
8
9
10
0
2
4
8
10
-50
-25
0
25
50
75
100
125
150
1
5
10
50
100
300
-50
-25
0
25
50
75
100
125 150
.01
.05
.1
1
5
10
50
100
Crss
Coss
500
400
300
200
100
0
16
12
8
4
0
10
5
1
.5
.1
3,000
1,000
500
100
50
10
0
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PDF描述 |
|---|---|
| ARF442 | ER 7C 7#12 SKT RECP WALL |
| ARF444 | N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET |
| ARF445 | N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET |
| ARF446 | N-CHANNEL ENHANCEMENT MODE |
| ARF447 | N-CHANNEL ENHANCEMENT MODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ARF444 | 制造商:Microsemi Corporation 功能描述:PWR MOSFET RF N-CH 900V TO-247AD |
| ARF444G | 制造商:Microsemi Corporation 功能描述:ARF444 Series N-Channel 300 W 15 MHz Flange Mount RF Power Mosfet - TO-247-3 |
| ARF445 | 制造商:Microsemi Corporation 功能描述:PWR MOSFET RF N-CH 900V TO-247AD |
| ARF446 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE |
| ARF446_03 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE |
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