- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄366583 > ARF440 (Advanced Power Technology Ltd.) N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET PDF資料下載
參數(shù)資料
| 型號： | ARF440 |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET |
| 中文描述： | N溝道增強型射頻功率MOSFET |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 56K |
| 代理商： | ARF440 |
TO-247
N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET
D
G
S
ARF440
ARF441
THE ARF440 PIN-OUTS ARE MIRROR IMAGE OF THE ARF441.
)
125W
125W
50V 13.56MHz
50V 13.56MHz
MAXIMUM RATINGS
All Ratings: T
C
= 25
°
C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
The ARF440 and ARF441 comprise a symmetric pair of RF power transistors designed for narrow-band push-pull
commercial, medical and industrial RF power amplifier applications.
Specified 50 Volt, 13.56 MHz Characteristics:
Output Power = 125 Watts.
Gain = 21dB (Typ.)
Efficiency = 63% (Typ.)
Low Cost Common Source RF Package.
Very High Breakdown for Improved Ruggedness.
Low Thermal Resistance.
Nitride Passivated Die for Improved Reliability.
Symbol
BV
DSS
V
DS
(ON)
I
DSS
I
GSS
g
fs
V
GS
(TH)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250
μ
A)
On State Drain Voltage
1
(I
D
(ON) = 10A, V
GS
= 10V)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125
°
C)
Gate-Source Leakage Current (V
GS
=
±
30V, V
DS
= 0V)
Forward Transconductance (V
DS
= 10V, I
D
= 5.5A)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 200mA)
MIN
TYP
MAX
150
6
250
1000
±
100
4
5
2
5
UNIT
Volts
μ
A
nA
mhos
Volts
Symbol
V
DSS
V
DGO
I
D
V
GS
P
D
R
θ
JC
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ T
C
= 25
°
C
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25
°
C
Junction to Case
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
ARF440/441
150
150
11
±
30
167
0.75
-55 to 150
300
UNIT
Volts
Amps
Volts
Watts
°
C/W
°
C
RF OPERATION 1-15MHz
POWER MOS IV
0
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
EUROPE
Avenue J.F. Kennedy Bat B4 Parc Cadéra Nord
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
F-33700 Merignac - France
Phone: (33) 5 5792 1515
FAX: (33) 5 5647 9761
APT Website - http://www.advancedpower.com
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ARF441 | Circular Connector; No. of Contacts:7; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:20; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:20-15 RoHS Compliant: No |
| ARF443 | N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET |
| ARF442 | ER 7C 7#12 SKT RECP WALL |
| ARF444 | N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET |
| ARF445 | N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ARF441 | 制造商:Microsemi Corporation 功能描述:PWR MOSFET RF N-CH 150V TO-247AD |
| ARF442 | 制造商:Microsemi Corporation 功能描述:PWR MOSFET RF N-CH 300V TO-247AD |
| ARF443 | 制造商:Microsemi Corporation 功能描述:PWR MOSFET RF N-CH 300V TO-247AD |
| ARF444 | 制造商:Microsemi Corporation 功能描述:PWR MOSFET RF N-CH 900V TO-247AD |
| ARF444G | 制造商:Microsemi Corporation 功能描述:ARF444 Series N-Channel 300 W 15 MHz Flange Mount RF Power Mosfet - TO-247-3 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。