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參數(shù)資料
| 型號(hào)： | AR1F3P-AZ |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | SC-43B, 3 PIN |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 116K |
| 代理商： | AR1F3P-AZ |
Data Sheet D16172EJ1V0DS
2
AR1 SERIES
AR1A3M
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB =
60 V, IE = 0
100
nA
DC current gain
hFE1 **
VCE =
2.0 V, IC = 0.1 A
50
DC current gain
hFE2 **
VCE =
2.0 V, IC = 0.5 A
100
DC current gain
hFE3 **
VCE =
2.0 V, IC = 1.0 A
50
Low level output voltage
VOL **
VIN =
5.0 V, IC = 0.4 A
0.4
V
Low level input voltage
VIL **
VCE =
5.0 V, IC = 100
A
0.3
V
Input resistance
R1
0.7
1.0
1.3
k
E-to-B resistance
R2
0.7
1.0
1.3
k
** PW
≤ 350
s, duty cycle ≤ 2 %
AR1F3P
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB =
60 V, IE = 0
100
nA
DC current gain
hFE1 **
VCE =
2.0 V, IC = 0.1 A
150
DC current gain
hFE2 **
VCE =
2.0 V, IC = 0.5 A
100
DC current gain
hFE3 **
VCE =
2.0 V, IC = 1.0 A
50
Low level output voltage
VOL **
VIN =
5.0 V, IC = 0.35 A
0.3
V
Low level input voltage
VIL **
VCE =
5.0 V, IC = 100
A
0.3
V
Input resistance
R1
1.54
2.2
2.86
k
E-to-B resistance
R2
710
13
k
** PW
≤ 350
s, duty cycle ≤ 2 %
AR1L3N
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB =
60 V, IE = 0
100
nA
DC current gain
hFE1 **
VCE =
2.0 V, IC = 0.1 A
150
DC current gain
hFE2 **
VCE =
2.0 V, IC = 0.5 A
100
DC current gain
hFE3 **
VCE =
2.0 V, IC = 1.0 A
50
Low level output voltage
VOL **
VIN =
5.0 V, IC = 0.2 A
0.3
V
Low level input voltage
VIL **
VCE =
5.0 V, IC = 100
A
0.3
V
Input resistance
R1
3.29
4.7
6.11
k
E-to-B resistance
R2
710
13
k
** PW
≤ 350
s, duty cycle ≤ 2 %
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