參數(shù)資料
型號(hào)： AR1A4A
廠商： NEC Corp.
英文描述： ER 5C 2#16 1#12 2#4 SKT RECP
中文描述： 芯片電阻進(jìn)步黨硅外延晶體管
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 96K
代理商： AR1A4A
Data Sheet D16172EJ1V0DS
2
AR1 SERIES
AR1A3M
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
=
60 V, I
E
= 0
100
nA
DC current gain
h
FE1
**
V
CE
=
2.0 V, I
C
=
0.1 A
50
DC current gain
h
FE2
**
V
CE
=
2.0 V, I
C
=
0.5 A
100
DC current gain
h
FE3
**
V
CE
=
2.0 V, I
C
=
1.0 A
50
Low level output voltage
V
OL
**
V
IN
=
5.0 V, I
C
=
0.4 A
0.4
V
Low level input voltage
V
IL
**
V
CE
=
5.0 V, I
C
=
100
μ
A
0.3
V
Input resistance
R
1
0.7
1.0
1.3
k
k
E-to-B resistance
R
2
0.7
1.0
1.3
**PW
≤
350
μ
s, duty cycle
≤
2 %
AR1F3P
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
=
60 V, I
E
= 0
100
nA
DC current gain
h
FE1
**
V
CE
=
2.0 V, I
C
=
0.1 A
150
DC current gain
h
FE2
**
V
CE
=
2.0 V, I
C
=
0.5 A
100
DC current gain
h
FE3
**
V
CE
=
2.0 V, I
C
=
1.0 A
50
Low level output voltage
V
OL
**
V
IN
=
5.0 V, I
C
=
0.35 A
0.3
V
Low level input voltage
V
IL
**
V
CE
=
5.0 V, I
C
=
100
μ
A
0.3
V
k
Input resistance
R
1
1.54
2.2
2.86
E-to-B resistance
R
2
7
10
13
k
**PW
≤
350
μ
s, duty cycle
≤
2 %
AR1L3N
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
=
60 V, I
E
= 0
100
nA
DC current gain
h
FE1
**
V
CE
=
2.0 V, I
C
=
0.1 A
150
DC current gain
h
FE2
**
V
CE
=
2.0 V, I
C
=
0.5 A
100
DC current gain
h
FE3
**
V
CE
=
2.0 V, I
C
=
1.0 A
50
Low level output voltage
V
OL
**
V
IN
=
5.0 V, I
C
=
0.2 A
V
CE
=
5.0 V, I
C
=
100
μ
A
0.3
0.3
V
Low level input voltage
V
IL
**
V
Input resistance
R
1
3.29
4.7
6.11
k
E-to-B resistance
R
2
7
10
13
k
**PW
≤
350
μ
s, duty cycle
≤
2 %
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