參數(shù)資料
型號： AR1A3M
廠商： NEC Corp.
英文描述： on-chip resistor PNP silicon epitaxial transistor
中文描述： 芯片電阻進步黨硅外延晶體管
文件頁數(shù)： 3/6頁
文件大?。?/td> 96K
代理商： AR1A3M
Data Sheet D16172EJ1V0DS
3
AR1 SERIES
AR1A4M
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
=
60 V, I
E
= 0
100
nA
DC current gain
h
FE1
**
V
CE
=
2.0 V, I
C
=
0.1 A
150
DC current gain
h
FE2
**
V
CE
=
2.0 V, I
C
=
0.5 A
100
DC current gain
h
FE3
**
V
CE
=
2.0 V, I
C
=
1.0 A
50
Low level output voltage
V
OL
**
V
IN
=
5.0 V, I
C
=
0.1 A
0.2
V
Low level input voltage
V
IL
**
V
CE
=
5.0 V, I
C
=
100
μ
A
0.3
V
Input resistance
R
1
7
10
13
k
k
E-to-B resistance
R
2
7
10
13
**PW
≤
350
μ
s, duty cycle
≤
2 %
AR1L2Q
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
=
60 V, I
E
= 0
100
nA
DC current gain
h
FE1
**
V
CE
=
2.0 V, I
C
=
0.1 A
150
DC current gain
h
FE2
**
V
CE
=
2.0 V, I
C
=
0.5 A
100
DC current gain
h
FE3
**
V
CE
=
2.0 V, I
C
=
1.0 A
50
Low level output voltage
V
OL
**
V
IN
=
5.0 V, I
C
=
0.5 A
0.55
V
Low level input voltage
V
IL
**
V
CE
=
5.0 V, I
C
=
100
μ
A
0.3
V
Input resistance
R
1
329
470
611
E-to-B resistance
R
2
3.29
4.7
6.11
k
**PW
≤
350
μ
s, duty cycle
≤
2 %
AR1F2Q
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
=
60 V, I
E
= 0
100
nA
DC current gain
h
FE1
**
V
CE
=
2.0 V, I
C
=
0.1 A
80
DC current gain
h
FE2
**
V
CE
=
2.0 V, I
C
=
0.5 A
100
DC current gain
h
FE3
**
V
CE
=
2.0 V, I
C
=
1.0 A
50
Low level output voltage
V
OL
**
V
IN
=
5.0 V, I
C
=
0.5 A
V
CE
=
5.0 V, I
C
=
100
μ
A
0.55
0.3
V
Low level input voltage
V
IL
**
V
Input resistance
R
1
154
220
286
E-to-B resistance
R
2
1.54
2.2
2.86
k
**PW
≤
350
μ
s, duty cycle
≤
2 %
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