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參數(shù)資料
| 型號(hào)： | APTML60U12R020T1AG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 45 A, 600 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 97K |
| 代理商： | APTML60U12R020T1AG |
APTML60U12R020T1AG
APT
M
L
60U12R0
20T
1AG
–
Rev
1
M
a
rc
h,
2010
www.microsemi.com
1 – 3
Pins 1/2 ; 5/6 must be shorted together
Absolute maximum ratings
* Output current must be limited to 31A @ TC=25°C and 22A @ TC=80°C to not exceed the shunt specification.
In saturation mode
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
600
V
Tc = 25°C
45*
ID
Continuous Drain Current
Tc = 80°C
33*
IDM
Pulsed Drain current
172
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
150
m
Ω
PD
Maximum Power Dissipation
Tc = 25°C
568
W
IAR
Avalanche current (repetitive and non repetitive)
45
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
3000
mJ
Application
Electronic load dedicated to power supplies and
battery discharge testing
Features
Linear MOSFET
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
AlN substrate for improved thermal performance
Benefits
Direct mounting to heatsink (isolated package)
easy series and parallels combinations for power and
voltage improvements
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Linear MOSFET
Power Module
VDSS = 600V
RDSon = 125mΩ typ @ Tj = 25°C
ID = 45A* @ Tc = 25°C
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