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參數(shù)資料
| 型號(hào)： | APTM20UM03F-ALN |
| 元件分類： | JFETs |
| 英文描述： | 580 A, 200 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-5 |
| 文件頁(yè)數(shù)： | 6/6頁(yè) |
| 文件大?。?/td> | 299K |
| 代理商： | APTM20UM03F-ALN |
APTM20UM03F-AlN
A
P
T
M
20U
M
03F
–A
lN
R
ev
0
J
ul
y,
2004
APT website – http://www.advancedpower.com
6 – 6
Delay Times vs Current
td(on)
td(off)
0
20
40
60
80
100
120
100 200 300 400 500 600 700 800 900
ID, Drain Current (A)
t d(
o
n)
an
d
t
d(o
ff)
(n
s
)
VDS=133V
RG=0.8
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
120
140
160
100 200 300 400 500 600 700 800 900
ID, Drain Current (A)
t r
a
nd
t
f(n
s
)
VDS=133V
RG=0.8
TJ=125°C
L=100H
Switching Energy vs Current
Eon
Eoff
0
2
4
6
8
10
12
100 200 300 400 500 600 700 800 900
ID, Drain Current (A)
E
on
a
nd
E
of
f(m
J
)
VDS=133V
RG=0.8
TJ=125°C
L=100H
Eon
Eoff
4
6
8
10
12
14
16
18
20
0
1
2
3456
789
Gate Resistance (Ohms)
S
w
it
ch
in
g
E
n
er
g
y
(
m
J)
Switching Energy vs Gate Resistance
VDS=133V
ID=580A
TJ=125°C
L=100H
Hard
switching
ZCS
ZVS
0
50
100
150
200
250
300
350
70
170
270
370
470
570
ID, Drain Current (A)
Fr
e
que
nc
y
(
k
H
z
)
Operating Frequency vs Drain Current
VDS=133V
D=50%
RG=0.8
TJ=125°C
TC=75°C
TJ=150°C
1
10
100
1000
10000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
I DR
,R
ever
se
D
rai
n
C
u
rr
en
t
(A
)
Source to Drain Diode Forward Voltage
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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