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參數(shù)資料
| 型號(hào)： | APTM20DHM08 |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 208 A, 200 V, 0.008 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-8 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 289K |
| 代理商： | APTM20DHM08 |
APTM20DHM08
A
PT
M
20D
H
M
08
–
R
ev
1
M
ay,
2004
APT website – http://www.advancedpower.com
1 – 6
S4
G4
VBUS
0/VBUS
S1
G1
OUT1
OUT2
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
200
V
Tc = 25°C
208
ID
Continuous Drain Current
Tc = 80°C
155
IDM
Pulsed Drain current
832
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
8
m
W
PD
Maximum Power Dissipation
Tc = 25°C
781
W
IAR
Avalanche current (repetitive and non repetitive)
100
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
3000
mJ
VDSS = 200V
RDSon = 8m
W max @ Tj = 25°C
ID = 208A @ Tc = 25°C
Application
Welding converters
Switched Mode Power Supplies
Switched Reluctance Motor Drives
Features
Power MOS 7 MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
Asymmetrical - bridge
MOSFET Power Module
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| APTM20DHM20T | 89 A, 200 V, 0.02 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM20DUM04 | 372 A, 200 V, 0.004 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM20DUM04 | 372 A, 200 V, 0.004 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM20HM08F | 208 A, 200 V, 0.008 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
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