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參數(shù)資料
| 型號(hào)： | APTM120U10SA |
| 元件分類： | JFETs |
| 英文描述： | 116 A, 1200 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-4 |
| 文件頁(yè)數(shù)： | 6/6頁(yè) |
| 文件大?。?/td> | 293K |
| 代理商： | APTM120U10SA |
APTM120U10SA
A
P
T
M
120U
10
SA
R
ev
0
S
ept
em
be
r,
2005
APT website – http://www.advancedpower.com
6 – 6
Delay Times vs Current
td(on)
td(off)
0
50
100
150
200
250
300
30
60
90
120
150
180
ID, Drain Current (A)
t d(o
n
)a
nd
t
d(
off
)(n
s
)
VDS=800V
RG=1.2
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
30
60
90
120
150
180
ID, Drain Current (A)
t r
an
d
t
f(n
s)
VDS=800V
RG=1.2
TJ=125°C
L=100H
Switching Energy vs Current
Eon
Eoff
0
4
8
12
16
30
60
90
120
150
180
ID, Drain Current (A)
Sw
it
ch
in
gEne
rgy
(m
J)
VDS=800V
RG=1.2
TJ=125°C
L=100H
Eon
Eoff
4
8
12
16
20
24
024
68
Gate Resistance (Ohms)
Sw
it
ch
in
gEne
rgy
(m
J)
Switching Energy vs Gate Resistance
VDS=800V
ID=116A
TJ=125°C
L=100H
Hard
switching
ZCS
ZVS
0
25
50
75
100
125
150
175
30
50
70
90
110
ID, Drain Current (A)
Fr
eq
u
en
cy
(
kH
z)
Operating Frequency vs Drain Current
VDS=800V
D=50%
RG=1.2
TJ=125°C
TC=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
I DR
,R
ever
se
D
rai
n
C
u
rr
en
t(
A
)
Source to Drain Diode Forward Voltage
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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| APTM120U10SA | 116 A, 1200 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET |
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| APTM20AM05F | 317 A, 200 V, 0.005 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTM120U10SAG | 功能描述:MOSFET N-CH 1200V 116A SP6 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTM120U10SCAVG | 功能描述:MOSFET PWR MOD 1200V 116A SP6 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTM120UM70DAG | 功能描述:MOSFET N-CH 1200V 171A SP6 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTM120UM70D-ALN | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Single switch with Series diodes MOSFET Power Module |
| APTM120UM70FA | 制造商:Microsemi Corporation 功能描述:POWER FREDFET TRANSISTOR |
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