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參數(shù)資料
| 型號： | APTM120A20S |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 50 A, 1200 V, 0.2 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-7 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 301K |
| 代理商： | APTM120A20S |
APTM120A20S
A
P
T
M
120A
20S
R
ev
0
J
ul
y,
2004
APT website – http://www.advancedpower.com
3 – 6
Parallel diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Repetitive Reverse Voltage
1200
V
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 70°C
120
A
IF = 120A
2
2.5
IF = 240A
2.3
VF
Diode Forward Voltage
IF = 120A
Tj = 125°C
1.8
V
Tj = 25°C
400
trr
Reverse Recovery Time
IF = 120A
VR = 800V
di/dt = 400A/s
Tj = 125°C
470
ns
Tj = 25°C
2.4
Qrr
Reverse Recovery Charge
IF = 120A
VR = 800V
di/dt = 400A/s
Tj = 125°C
8
C
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max
Unit
Transistor
0.1
Series diode
0.65
RthJC
Junction to Case
Parallel diode
0.46
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
100
°C
To heatsink
M6
3
5
Torque Mounting torque
For terminals
M5
2
3.5
N.m
Wt
Package Weight
280
g
Package outline
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