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參數(shù)資料
| 型號(hào)： | APTM10TDUM09P |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 139 A, 100 V, 0.009 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-21 |
| 文件頁(yè)數(shù)： | 6/6頁(yè) |
| 文件大?。?/td> | 310K |
| 代理商： | APTM10TDUM09P |
APTM10TDUM09P
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2004
APT website – http://www.advancedpower.com
6 – 6
Delay Times vs Current
td(on)
td(off)
0
20
40
60
80
100
120
0
50
100
150
200
250
ID, Drain Current (A)
t d(
o
n)
an
d
t
d(o
ff)
(n
s
)
VDS=66V
RG=5
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
120
140
160
0
50
100
150
200
250
ID, Drain Current (A)
t r
a
nd
t
f(n
s
)
VDS=66V
RG=5
TJ=125°C
L=100H
Switching Energy vs Current
Eon
Eoff
0
0.5
1
1.5
0
50
100
150
200
250
ID, Drain Current (A)
E
on
a
nd
E
of
f(m
J
)
VDS=66V
RG=5
TJ=125°C
L=100H
Eon
Eoff
0
0.5
1
1.5
2
2.5
0
102030
4050
60
Gate Resistance (Ohms)
Sw
it
ch
in
g
En
e
rg
y
(m
J
)
Switching Energy vs Gate Resistance
VDS=66V
ID=139A
TJ=125°C
L=100H
Hard
switching
ZVS
ZCS
0
50
100
150
200
250
300
25
50
75
100
125
150
ID, Drain Current (A)
Fr
e
que
nc
y
(
k
H
z
)
Operating Frequency vs Drain Current
VDS=66V
D=50%
RG=5
TJ=125°C
TC=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, Source to Drain Voltage (V)
I DR
,R
ever
se
D
rai
n
C
u
rr
en
t
(A
)
Source to Drain Diode Forward Voltage
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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